DOI: 10.1063/1.117830. Self-assembling GaN quantum dots on Al<i>x</i>Ga1−<i>x</i>N surfaces using a surfactant

Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant

10.1063/1.117830

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Nanoscale GaN quantum dots were fabricated on AlxGa1−xN layer surfaces via metalorganic chemical vapor deposition. In order to achieve a self-assembling dot structure, a two-dimensional growth mode (step flow) of GaN films on AlxGa1−xN (x=0–0.2) surfaces that is energetically commenced under the conventional growth conditions was intentionally modified into a three-dimensional mode by using a ‘‘surfactant.’’ The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to the doping rate of tetraethyl silane used as a surfactant, the Al content (x) of the AlxGa1−xN layer, and the growth temperature. A very intense photoluminescence emission was observed from the GaN dots embedded in the AlGaN layers.

Bibliography

Tanaka, S., Iwai, S., & Aoyagi, Y. (1996). Self-assembling GaN quantum dots on AlxGa1âxN surfaces using a surfactant. Applied Physics Letters, 69(26), 4096â4098.

Authors 3

Satoru Tanaka (first)
Sohachi Iwai (additional)
Yoshinobu Aoyagi (additional)

References 0 Referenced 258

None

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 6:56 a.m.)
Indexed	1 month, 4 weeks ago (July 4, 2025, 9:41 a.m.)
Issued	28 years, 8 months ago (Dec. 23, 1996)
Published	28 years, 8 months ago (Dec. 23, 1996)
Published Print	28 years, 8 months ago (Dec. 23, 1996)

Funders 0

None

BibTeX

@article{Tanaka_1996, title={Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117830}, DOI={10.1063/1.117830}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tanaka, Satoru and Iwai, Sohachi and Aoyagi, Yoshinobu}, year={1996}, month=dec, pages={4096–4098} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        4
      ]
    ],
    "date-time": "2025-07-04T13:41:31Z",
    "timestamp": 1751636491784
  },
  "reference-count": 0,
  "publisher": "AIP Publishing",
  "issue": "26",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        12,
        23
      ]
    ]
  },
  "abstract": "<jats:p>Nanoscale GaN quantum dots were fabricated on AlxGa1\u2212xN layer surfaces via metalorganic chemical vapor deposition. In order to achieve a self-assembling dot structure, a two-dimensional growth mode (step flow) of GaN films on AlxGa1\u2212xN (x=0\u20130.2) surfaces that is energetically commenced under the conventional growth conditions was intentionally modified into a three-dimensional mode by using a \u2018\u2018surfactant.\u2019\u2019 The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to the doping rate of tetraethyl silane used as a surfactant, the Al content (x) of the AlxGa1\u2212xN layer, and the growth temperature. A very intense photoluminescence emission was observed from the GaN dots embedded in the AlGaN layers.</jats:p>",
  "DOI": "10.1063/1.117830",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:43:06Z",
    "timestamp": 1027690986000
  },
  "page": "4096-4098",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 258,
  "title": "Self-assembling GaN quantum dots on Al<i>x</i>Ga1\u2212<i>x</i>N surfaces using a surfactant",
  "prefix": "10.1063",
  "volume": "69",
  "author": [
    {
      "given": "Satoru",
      "family": "Tanaka",
      "sequence": "first",
      "affiliation": [
        {
          "name": "The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan"
        }
      ]
    },
    {
      "given": "Sohachi",
      "family": "Iwai",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan"
        }
      ]
    },
    {
      "given": "Yoshinobu",
      "family": "Aoyagi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/69/26/4096/18523700/4096_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/69/26/4096/18523700/4096_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T11:56:18Z",
    "timestamp": 1706961378000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/69/26/4096/521069/Self-assembling-GaN-quantum-dots-on-AlxGa1-xN"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        12,
        23
      ]
    ]
  },
  "references-count": 0,
  "journal-issue": {
    "issue": "26",
    "published-print": {
      "date-parts": [
        [
          1996,
          12,
          23
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.117830",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        12,
        23
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        12,
        23
      ]
    ]
  }
}