DOI: 10.1063/1.117727. Deep-level defects and <i>n</i>-type-carrier concentration in nitrogen implanted GaN

Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN

10.1063/1.117727

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We analyzed the intrinsic defects and the n-type-carrier concentration generated by nitrogen ion implantation in n-type GaN by deep-level-transient spectroscopy and by capacitance–voltage measurements, respectively. The samples were grown on sapphire by metalorganic vapor-phase epitaxy. Nitrogen implantation with different ion doses and postimplantation rapid-thermal annealing (RTA) were investigated. We observed a growing n-type-carrier concentration and increasing defect concentration with increasing nitrogen ion implantation doses. After RTA the concentration of free carriers and deep levels as found in the as-grown state are restored. We also address contrarily seeming results from measurements of sheet resistance after N implantation published recently.

Bibliography

Haase, D., Schmid, M., KÃ¼rner, W., DÃ¶rnen, A., HÃ¤rle, V., Scholz, F., Burkard, M., & Schweizer, H. (1996). Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN. Applied Physics Letters, 69(17), 2525â2527.

Authors 8

D. Haase (first)
M. Schmid (additional)
W. Kürner (additional)
A. Dörnen (additional)
V. Härle (additional)
F. Scholz (additional)
M. Burkard (additional)
H. Schweizer (additional)

References 11 Referenced 147

{'key': '2024020311373265300_r1', 'first-page': 'L2112', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '28', 'year': '1989'} / Jpn. J. Appl. Phys. (1989)
{'key': '2024020311373265300_r2', 'first-page': 'L8', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '32', 'year': '1993'} / Jpn. J. Appl. Phys. (1993)
{'key': '2024020311373265300_r3', 'first-page': 'L74', 'article-title': 'Jpn. J. Appl. Phys. 1', 'volume': '35', 'year': '1996'} / Jpn. J. Appl. Phys. 1 (1996)
{'key': '2024020311373265300_r4', 'first-page': '1435', 'article-title': 'Appl. Phys. Lett.', 'volume': '67', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311373265300_r5', 'first-page': '3008', 'article-title': 'J. Appl. Phys.', 'volume': '78', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020311373265300_r6', 'first-page': '327', 'article-title': 'Appl. Phys. Lett.', 'volume': '15', 'year': '1969'} / Appl. Phys. Lett. (1969)
{'key': '2024020311373265300_r7', 'first-page': '304', 'article-title': 'J. Appl. Phys.', 'volume': '76', 'year': '1994'} / J. Appl. Phys. (1994)
{'key': '2024020311373265300_r8', 'first-page': '3317', 'article-title': 'Phys. Rev. B', 'volume': '39', 'year': '1989'} / Phys. Rev. B (1989)
{'key': '2024020311373265300_r9', 'first-page': '4130', 'article-title': 'J. Appl. Phys.', 'volume': '72', 'year': '1992'} / J. Appl. Phys. (1992)
{'key': '2024020311373265300_r10', 'first-page': '8067', 'article-title': 'Phys. Rev. B', 'volume': '50', 'year': '1994'} / Phys. Rev. B (1994)
{'key': '2024020311373265300_r11'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 6:37 a.m.)
Indexed	2 months ago (June 24, 2025, 7:28 a.m.)
Issued	28 years, 10 months ago (Oct. 21, 1996)
Published	28 years, 10 months ago (Oct. 21, 1996)
Published Print	28 years, 10 months ago (Oct. 21, 1996)

Funders 0

None

BibTeX

@article{Haase_1996, title={Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117727}, DOI={10.1063/1.117727}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haase, D. and Schmid, M. and Kürner, W. and Dörnen, A. and Härle, V. and Scholz, F. and Burkard, M. and Schweizer, H.}, year={1996}, month=oct, pages={2525–2527} }

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