DOI: 10.1063/1.117646. Growth and properties of InxGa1−xN/AlyGa1−yN multiquantum wells developed by molecular beam epitaxy

Growth and properties of InxGa1−xN/AlyGa1−yN multiquantum wells developed by molecular beam epitaxy

10.1063/1.117646

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In0.09Ga0.91N/GaN and In0.35Ga0.65N/Al0.1Ga0.9N multiquantum well structures (MQW) were grown by molecular beam epitaxy on (0001) sapphire substrates. The thickness of the wells and the barriers were in the range of 80–120 Å. The microstructure of these MQW structures was investigated by transmission electron microscopy. The room temperature photoluminescence spectra in these MQW structures peak at 387 and 463 nm with full width at half maximum of 16 and 28 nm, respectively.

Bibliography

Singh, R., Doppalapudi, D., & Moustakas, T. D. (1996). Growth and properties of InxGa1âxN/AlyGa1âyN multiquantum wells developed by molecular beam epitaxy. Applied Physics Letters, 69(16), 2388â2390.

Authors 3

R. Singh (first)
D. Doppalapudi (additional)
T. D. Moustakas (additional)

References 11 Referenced 28

{'key': '2024020311355919600_r1', 'first-page': '53', 'article-title': 'Optoelectron. Devices Technol.', 'volume': '5', 'year': '1990'} / Optoelectron. Devices Technol. (1990)
{'key': '2024020311355919600_r2', 'first-page': '2105', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311355919600_r3', 'first-page': '3269', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311355919600_r4'}
{'key': '2024020311355919600_r5'}
{'key': '2024020311355919600_r6'}
{'key': '2024020311355919600_r7', 'first-page': '3911', 'article-title': 'J. Appl. Phys.', 'volume': '74', 'year': '1993'} / J. Appl. Phys. (1993)
{'key': '2024020311355919600_r8', 'first-page': '1403', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311355919600_r9', 'first-page': '3147', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311355919600_r10', 'first-page': '36', 'article-title': 'Physica B', 'volume': '185', 'year': '1993'} / Physica B (1993)
{'key': '2024020311355919600_r11', 'first-page': '1265', 'article-title': 'Semicond. Sci. Technol.', 'volume': '9', 'year': '1994'} / Semicond. Sci. Technol. (1994)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 6:36 a.m.)
Indexed	2 months, 1 week ago (June 24, 2025, 7:28 a.m.)
Issued	28 years, 10 months ago (Oct. 14, 1996)
Published	28 years, 10 months ago (Oct. 14, 1996)
Published Print	28 years, 10 months ago (Oct. 14, 1996)

Funders 0

None

BibTeX

@article{Singh_1996, title={Growth and properties of InxGa1‚ąíxN/AlyGa1‚ąíyN multiquantum wells developed by molecular beam epitaxy}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117646}, DOI={10.1063/1.117646}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Singh, R. and Doppalapudi, D. and Moustakas, T. D.}, year={1996}, month=oct, pages={2388‚Äď2390} }

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