DOI: 10.1063/1.117607. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

10.1063/1.117607

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped (1 μm gate length) AlGaN/GaN modulation doped field effect transistors (MODFETs), respectively. The devices also have large transconductances up to 140 mS/mm and a full channel current of 150–400 mA/mm. The Si doped MODFET sample demonstrated a very high room temperature mobility of 1500 cm2/Vs. With these specifications, GaN field effect transistors as microwave power devices are practical.

Bibliography

Wu, Y.-F., Keller, B. P., Keller, S., Kapolnek, D., Kozodoy, P., Denbaars, S. P., & Mishra, U. K. (1996). Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors. Applied Physics Letters, 69(10), 1438â1440.

Authors 7

Y.-F. Wu (first)
B. P. Keller (additional)
S. Keller (additional)
D. Kapolnek (additional)
P. Kozodoy (additional)
S. P. Denbaars (additional)
U. K. Mishra (additional)

References 10 Referenced 317

{'key': '2024020311212913400_r1', 'first-page': '357', 'article-title': 'Electron. Lett.', 'volume': '32', 'year': '1996'} / Electron. Lett. (1996)
{'key': '2024020311212913400_r2', 'first-page': '12', 'article-title': 'Appl. Phys. Lett.', 'volume': '62', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020311212913400_r3'}
{'key': '2024020311212913400_r4', 'first-page': '1951', 'article-title': 'Electron. Lett.', 'volume': '31', 'year': '1995'} / Electron. Lett. (1995)
{'key': '2024020311212913400_r5', 'first-page': '2849', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311212913400_r6'}
{'key': '2024020311212913400_r7', 'first-page': '1707', 'article-title': 'J. Electron. Mater.', 'volume': '24', 'year': '1995'} / J. Electron. Mater. (1995)
{'key': '2024020311212913400_r8'}
{'key': '2024020311212913400_r9'}
{'key': '2024020311212913400_r10'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 6:21 a.m.)
Indexed	2 months, 2 weeks ago (June 6, 2025, 4:47 a.m.)
Issued	28 years, 11 months ago (Sept. 2, 1996)
Published	28 years, 11 months ago (Sept. 2, 1996)
Published Print	28 years, 11 months ago (Sept. 2, 1996)

Funders 0

None

BibTeX

@article{Wu_1996, title={Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117607}, DOI={10.1063/1.117607}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wu, Y.-F. and Keller, B. P. and Keller, S. and Kapolnek, D. and Kozodoy, P. and Denbaars, S. P. and Mishra, U. K.}, year={1996}, month=sep, pages={1438–1440} }

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