Abstract
We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc. The sp3 fraction, hardness, and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2% and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≊80%) with low stress (1–3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (≊75%) sp2 bonded. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in regular ta-C films.
References
20
Referenced
106
{'key': '2024020311343842300_r1', 'first-page': '4777', 'article-title': 'Phys. Rev. B', 'volume': '48', 'year': '1993'}
/ Phys. Rev. B (1993){'key': '2024020311343842300_r2', 'first-page': '12', 'article-title': 'Phys. Rev. B', 'volume': '48', 'year': '1993'}
/ Phys. Rev. B (1993){'key': '2024020311343842300_r3', 'first-page': '2753', 'article-title': 'Phys. Rev. Lett.', 'volume': '72', 'year': '1994'}
/ Phys. Rev. Lett. (1994){'key': '2024020311343842300_r4'}
{'key': '2024020311343842300_r5', 'first-page': '899', 'article-title': 'Diam. Relat. Mater.', 'volume': '3', 'year': '1944'}
/ Diam. Relat. Mater. (1944){'key': '2024020311343842300_r6', 'first-page': '2529', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'}
/ Appl. Phys. Lett. (1996){'key': '2024020311343842300_r7', 'first-page': '498', 'article-title': 'Electron. Lett.', 'volume': '32', 'year': '1996'}
/ Electron. Lett. (1996){'key': '2024020311343842300_r8', 'first-page': '333', 'article-title': 'Z. Elektrochem.', 'volume': '59', 'year': '1955'}
/ Z. Elektrochem. (1955){'key': '2024020311343842300_r9', 'first-page': '773', 'article-title': 'Phys. Rev. Lett.', 'volume': '67', 'year': '1991'}
/ Phys. Rev. Lett. (1991){'key': '2024020311343842300_r10'}
{'key': '2024020311343842300_r11', 'first-page': '5198', 'article-title': 'J. Appl. Phys.', 'volume': '66', 'year': '1989'}
/ J. Appl. Phys. (1989){'key': '2024020311343842300_r12', 'first-page': '894', 'article-title': 'Appl. Phys. Lett.', 'volume': '67', 'year': '1995'}
/ Appl. Phys. Lett. (1995){'key': '2024020311343842300_r13', 'first-page': '41', 'article-title': 'Mater. Sci. Eng. A', 'volume': '107', 'year': '1989'}
/ Mater. Sci. Eng. A (1989){'key': '2024020311343842300_r14', 'first-page': '1928', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '11', 'year': '1993'}
/ J. Vac. Sci. Technol. B (1993){'key': '2024020311343842300_r15', 'first-page': '832', 'article-title': 'J. Appl. Phys.', 'volume': '78', 'year': '1995'}
/ J. Appl. Phys. (1995){'key': '2024020311343842300_r16', 'first-page': '441', 'article-title': 'Diam. Relat. Mater.', 'volume': '4', 'year': '1995'}
/ Diam. Relat. Mater. (1995){'key': '2024020311343842300_r17'}
{'key': '2024020311343842300_r18', 'first-page': '779', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'}
/ Appl. Phys. Lett. (1996){'key': '2024020311343842300_r19', 'first-page': '1594', 'article-title': 'Phys. Rev. B', 'volume': '53', 'year': '1994'}
/ Phys. Rev. B (1994){'key': '2024020311343842300_r20'}
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:40 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 6:34 a.m.) |
Indexed | 1 year, 1 month ago (July 25, 2024, 10:37 a.m.) |
Issued | 28 years, 10 months ago (Oct. 14, 1996) |
Published | 28 years, 10 months ago (Oct. 14, 1996) |
Published Print | 28 years, 10 months ago (Oct. 14, 1996) |
@article{Chhowalla_1996, title={Highly tetrahedral amorphous carbon films with low stress}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117519}, DOI={10.1063/1.117519}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chhowalla, M. and Yin, Y. and Amaratunga, G. A. J. and McKenzie, D. R. and Frauenheim, Th.}, year={1996}, month=oct, pages={2344–2346} }