DOI: 10.1063/1.117411. Mechanisms of recombination in GaN photodetectors

Mechanisms of recombination in GaN photodetectors

10.1063/1.117411

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Steady-state and transient responses of a nonintentionally doped GaN photodetector are investigated. The kinetics of the photoresponse demonstrate the existence of deep levels in the gap, acting as recombination centers with an acceptor character. The photoresponse displays two competing processes: a bimolecular recombination, dominating at high optical power range, and a monomolecular recombination involving long response times. The observed persistent photoconductivity and the huge photoconductive gain are due to the small electron capture cross section and a much faster hole capture rate.

Bibliography

Binet, F., Duboz, J. Y., Rosencher, E., Scholz, F., & HÃ¤rle, V. (1996). Mechanisms of recombination in GaN photodetectors. Applied Physics Letters, 69(9), 1202â1204.

Authors 5

F. Binet (first)
J. Y. Duboz (additional)
E. Rosencher (additional)
F. Scholz (additional)
V. Härle (additional)

References 16 Referenced 141

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{'key': '2024020311194413600_r2', 'first-page': '74', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '35', 'year': '1996'} / Jpn. J. Appl. Phys. (1996)
{'key': '2024020311194413600_r3', 'first-page': '3518', 'article-title': 'Appl. Phys. Lett.', 'volume': '66', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311194413600_r4', 'first-page': '2028', 'article-title': 'Appl. Phys. Lett.', 'volume': '67', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311194413600_r5', 'first-page': '2455', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
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{'key': '2024020311194413600_r7', 'first-page': '2917', 'article-title': 'Appl. Phys. Lett.', 'volume': '60', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020311194413600_r8', 'first-page': '1808', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311194413600_r9', 'first-page': '3792', 'article-title': 'Appl. Phys. Lett.', 'volume': '67', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311194413600_r10'}
{'key': '2024020311194413600_r11'}
{'key': '2024020311194413600_r12', 'first-page': '2712', 'article-title': 'Appl. Phys. Lett.', 'volume': '66', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311194413600_r13'}
{'key': '2024020311194413600_r14', 'first-page': '1972', 'article-title': 'Appl. Phys. Lett.', 'volume': '66', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311194413600_r15'}
{'key': '2024020311194413600_r16', 'first-page': '459', 'article-title': 'Phys. Status Solidi', 'volume': '19', 'year': '1967'} / Phys. Status Solidi (1967)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:27 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 6:20 a.m.)
Indexed	1 week, 4 days ago (Aug. 23, 2025, 9:21 p.m.)
Issued	29 years ago (Aug. 26, 1996)
Published	29 years ago (Aug. 26, 1996)
Published Print	29 years ago (Aug. 26, 1996)

Funders 0

None

BibTeX

@article{Binet_1996, title={Mechanisms of recombination in GaN photodetectors}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117411}, DOI={10.1063/1.117411}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Binet, F. and Duboz, J. Y. and Rosencher, E. and Scholz, F. and Härle, V.}, year={1996}, month=aug, pages={1202–1204} }

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