DOI: 10.1063/1.117349. Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

10.1063/1.117349

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2±0.2 eV is measured for Ga adatoms. Porous columnar features in the GaN microstructure are observed that are enhanced by higher growth temperatures and eliminated by growing Mg or Si doped GaN. We propose a model for this observation.

Bibliography

Guha, S., Bojarczuk, N. A., & Kisker, D. W. (1996). Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy. Applied Physics Letters, 69(19), 2879â2881.

Authors 3

S. Guha (first)
N. A. Bojarczuk (additional)
D. W. Kisker (additional)

References 15 Referenced 59

{'key': '2024020311442725900_r1', 'first-page': '250', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '1', 'year': '1983'} / J. Vac. Sci. Technol. B (1983)
{'key': '2024020311442725900_r2', 'first-page': '2505', 'article-title': 'Appl. Phys. Lett.', 'volume': '60', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020311442725900_r3', 'first-page': '448', 'article-title': 'J. Appl. Phys.', 'volume': '73', 'year': '1993'} / J. Appl. Phys. (1993)
{'key': '2024020311442725900_r4', 'first-page': '4455', 'article-title': 'J. Appl. Phys.', 'volume': '77', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020311442725900_r5', 'first-page': '6124', 'article-title': 'J. Appl. Phys.', 'volume': '74', 'year': '1993'} / J. Appl. Phys. (1993)
{'key': '2024020311442725900_r6', 'first-page': '1571', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '13', 'year': '1995'} / J. Vac. Sci. Technol. B (1995)
{'key': '2024020311442725900_r7', 'first-page': '4032', 'article-title': 'J. Appl. Phys.', 'volume': '39', 'year': '1968'} / J. Appl. Phys. (1968)
{'key': '2024020311442725900_r8'}
{'key': '2024020311442725900_r9', 'first-page': '273', 'article-title': 'J. Am. Ceram. Soc.', 'volume': '76', 'year': '1993'} / J. Am. Ceram. Soc. (1993)
{'key': '2024020311442725900_r10'}
{'key': '2024020311442725900_r11'}
{'key': '2024020311442725900_r12', 'first-page': '4223', 'article-title': 'J. Chem. Phys.', 'volume': '42', 'year': '1965'} / J. Chem. Phys. (1965)
{'key': '2024020311442725900_r13', 'first-page': '1242', 'article-title': 'Appl. Phys. Lett.', 'volume': '62', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020311442725900_r14', 'first-page': '4148', 'article-title': 'Phys. Rev. B', 'volume': '53', 'year': '1996'} / Phys. Rev. B (1996)
{'key': '2024020311442725900_r15', 'first-page': 'L441', 'article-title': 'Jpn. J. Appl. Phys. 2, Lett.', 'volume': '35', 'year': '1996'} / Jpn. J. Appl. Phys. 2, Lett. (1996)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 6:44 a.m.)
Indexed	1 year, 3 months ago (May 14, 2024, 3:56 p.m.)
Issued	28 years, 9 months ago (Nov. 4, 1996)
Published	28 years, 9 months ago (Nov. 4, 1996)
Published Print	28 years, 9 months ago (Nov. 4, 1996)

Funders 0

None

BibTeX

@article{Guha_1996, title={Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117349}, DOI={10.1063/1.117349}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Guha, S. and Bojarczuk, N. A. and Kisker, D. W.}, year={1996}, month=nov, pages={2879–2881} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        5,
        14
      ]
    ],
    "date-time": "2024-05-14T19:56:41Z",
    "timestamp": 1715716601107
  },
  "reference-count": 15,
  "publisher": "AIP Publishing",
  "issue": "19",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        11,
        4
      ]
    ]
  },
  "abstract": "<jats:p>We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2\u00b10.2 eV is measured for Ga adatoms. Porous columnar features in the GaN microstructure are observed that are enhanced by higher growth temperatures and eliminated by growing Mg or Si doped GaN. We propose a model for this observation.</jats:p>",
  "DOI": "10.1063/1.117349",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:07:39Z",
    "timestamp": 1027688859000
  },
  "page": "2879-2881",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 59,
  "title": "Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy",
  "prefix": "10.1063",
  "volume": "69",
  "author": [
    {
      "given": "S.",
      "family": "Guha",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Research Division, Yorktown Heights, New York 10547"
        }
      ]
    },
    {
      "given": "N. A.",
      "family": "Bojarczuk",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Research Division, Yorktown Heights, New York 10547"
        }
      ]
    },
    {
      "given": "D. W.",
      "family": "Kisker",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Research Division, Yorktown Heights, New York 10547"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020311442725900_r1",
      "first-page": "250",
      "article-title": "J. Vac. Sci. Technol. B",
      "volume": "1",
      "year": "1983"
    },
    {
      "key": "2024020311442725900_r2",
      "first-page": "2505",
      "article-title": "Appl. Phys. Lett.",
      "volume": "60",
      "year": "1992"
    },
    {
      "key": "2024020311442725900_r3",
      "first-page": "448",
      "article-title": "J. Appl. Phys.",
      "volume": "73",
      "year": "1993"
    },
    {
      "key": "2024020311442725900_r4",
      "first-page": "4455",
      "article-title": "J. Appl. Phys.",
      "volume": "77",
      "year": "1995"
    },
    {
      "key": "2024020311442725900_r5",
      "first-page": "6124",
      "article-title": "J. Appl. Phys.",
      "volume": "74",
      "year": "1993"
    },
    {
      "key": "2024020311442725900_r6",
      "first-page": "1571",
      "article-title": "J. Vac. Sci. Technol. B",
      "volume": "13",
      "year": "1995"
    },
    {
      "key": "2024020311442725900_r7",
      "first-page": "4032",
      "article-title": "J. Appl. Phys.",
      "volume": "39",
      "year": "1968"
    },
    {
      "key": "2024020311442725900_r8"
    },
    {
      "key": "2024020311442725900_r9",
      "first-page": "273",
      "article-title": "J. Am. Ceram. Soc.",
      "volume": "76",
      "year": "1993"
    },
    {
      "key": "2024020311442725900_r10"
    },
    {
      "key": "2024020311442725900_r11"
    },
    {
      "key": "2024020311442725900_r12",
      "first-page": "4223",
      "article-title": "J. Chem. Phys.",
      "volume": "42",
      "year": "1965"
    },
    {
      "key": "2024020311442725900_r13",
      "first-page": "1242",
      "article-title": "Appl. Phys. Lett.",
      "volume": "62",
      "year": "1993"
    },
    {
      "key": "2024020311442725900_r14",
      "first-page": "4148",
      "article-title": "Phys. Rev. B",
      "volume": "53",
      "year": "1996"
    },
    {
      "key": "2024020311442725900_r15",
      "first-page": "L441",
      "article-title": "Jpn. J. Appl. Phys. 2, Lett.",
      "volume": "35",
      "year": "1996"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/69/19/2879/18522793/2879_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/69/19/2879/18522793/2879_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T11:44:30Z",
    "timestamp": 1706960670000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/69/19/2879/66441/Surface-lifetimes-of-Ga-and-growth-behavior-on-GaN"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        11,
        4
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "19",
    "published-print": {
      "date-parts": [
        [
          1996,
          11,
          4
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.117349",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        11,
        4
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        11,
        4
      ]
    ]
  }
}