DOI: 10.1063/1.116887. Er doping of AlN during growth by metalorganic molecular beam epitaxy

Er doping of AlN during growth by metalorganic molecular beam epitaxy

10.1063/1.116887

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The doping of AlN during growth by metalorganic molecular beam epitaxy with an Er effusion source has resulted in AlN:Er films exhibiting strong room-temperature 1.54 μm photoluminescence (PL). The luminescence detected in the AlN:Er grown during this study was orders of magnitude greater in intensity than that from ion-implanted samples and represents the first demonstration of strong emission from rare-earth doped, epitaxial group III nitrides. Secondary ion mass spectroscopy was used to verify a dynamic range for this doping technique of 3×1017–2×1021 Er cm−3 with varying effusion cell temperature. The effects of growth temperature on Er incorporation and segregation behavior were also determined. PL studies, including room-temperature and thermal quenching experiments, were conducted.

Bibliography

MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., HÃ¶mmerich, U., Wu, X., Schwartz, R. N., Wilson, R. G., & Zavada, J. M. (1996). Er doping of AlN during growth by metalorganic molecular beam epitaxy. Applied Physics Letters, 69(14), 2083â2085.

Authors 8

J. D. MacKenzie (first)
C. R. Abernathy (additional)
S. J. Pearton (additional)
U. Hömmerich (additional)
X. Wu (additional)
R. N. Schwartz (additional)
R. G. Wilson (additional)
J. M. Zavada (additional)

References 9 Referenced 60

{'key': '2024020311295994800_r1', 'first-page': 'L1332', 'article-title': 'Jpn. J. Appl. Phys. Lett.', 'volume': '10B', 'year': '1995'} / Jpn. J. Appl. Phys. Lett. (1995)
{'key': '2024020311295994800_r2', 'first-page': '718', 'article-title': 'Electron. Lett.', 'volume': '25', 'year': '1989'} / Electron. Lett. (1989)
{'key': '2024020311295994800_r3', 'first-page': '1285', 'article-title': 'Solid-State Electron.', 'volume': '38', 'year': '1995'} / Solid-State Electron. (1995)
{'key': '2024020311295994800_r4', 'first-page': '992', 'article-title': 'Appl. Phys. Lett.', 'volume': '65', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020311295994800_r5', 'first-page': '253', 'article-title': 'Appl. Phys. Lett.', 'volume': '67', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311295994800_r6', 'first-page': 'L524', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '29', 'year': '1990'} / Jpn. J. Appl. Phys. (1990)
{'key': '2024020311295994800_r7', 'first-page': '2672', 'article-title': 'J. Appl. Phys.', 'volume': '70', 'year': '1991'} / J. Appl. Phys. (1991)
{'key': '2024020311295994800_r8', 'first-page': '169', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '301', 'year': '1993'} / Mater. Res. Soc. Symp. Proc. (1993)
{'key': '2024020311295994800_r9', 'first-page': '2317', 'article-title': 'Appl. Phys. Lett.', 'volume': '59', 'year': '1991'} / Appl. Phys. Lett. (1991)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 6:30 a.m.)
Indexed	4 months, 1 week ago (April 28, 2025, 2:22 p.m.)
Issued	28 years, 11 months ago (Sept. 30, 1996)
Published	28 years, 11 months ago (Sept. 30, 1996)
Published Print	28 years, 11 months ago (Sept. 30, 1996)

Funders 0

None

BibTeX

@article{MacKenzie_1996, title={Er doping of AlN during growth by metalorganic molecular beam epitaxy}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116887}, DOI={10.1063/1.116887}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={MacKenzie, J. D. and Abernathy, C. R. and Pearton, S. J. and Hömmerich, U. and Wu, X. and Schwartz, R. N. and Wilson, R. G. and Zavada, J. M.}, year={1996}, month=sep, pages={2083–2085} }

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