DOI: 10.1063/1.116580. <i>In situ</i>, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)

In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)

10.1063/1.116580

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The size evolution of molecular beam epitaxy-grown strained InAs three-dimensional (3D) islands on GaAs(001) is examined using in situ ultrahigh vacuum atomic force microscopy. Remarkably, just after the initiation of well-formed 3D islands at ∼1.57 ML InAs deposition, the lateral size dispersion and average value are found to first increase drastically with the smallest amount (∼0.05 ML) of additional InAs deposition and then decrease and saturate, indicating the onset of a natural tendency for size equalization, including through loss of material from the initially formed largest islands. These observations are found to be consistent with the previously suggested island-separation dependent influence of the evolving island-induced substrate strain fields on the adatom migration and incorporation/detachment kinetics that control the evolution of the islands.

Bibliography

Kobayashi, N. P., Ramachandran, T. R., Chen, P., & Madhukar, A. (1996). In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001). Applied Physics Letters, 68(23), 3299â3301.

Authors 4

N. P. Kobayashi (first)
T. R. Ramachandran (additional)
P. Chen (additional)
A. Madhukar (additional)

References 15 Referenced 208

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{'key': '2024020310523155600_r4', 'first-page': '357', 'article-title': 'J. Cryst. Growth', 'volume': '150', 'year': '1995'} / J. Cryst. Growth (1995)
{'key': '2024020310523155600_r5', 'first-page': '2568', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '12', 'year': '1994'} / J. Vac. Sci. Technol. B (1994)
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{'key': '2024020310523155600_r9', 'first-page': '196', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310523155600_r10', 'first-page': '11687', 'article-title': 'Phys. Rev. B', 'volume': '50', 'year': '1994'} / Phys. Rev. B (1994)
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:52 a.m.)
Indexed	1 month, 2 weeks ago (July 7, 2025, 4:44 a.m.)
Issued	29 years, 2 months ago (June 3, 1996)
Published	29 years, 2 months ago (June 3, 1996)
Published Print	29 years, 2 months ago (June 3, 1996)

Funders 0

None

BibTeX

@article{Kobayashi_1996, title={In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116580}, DOI={10.1063/1.116580}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kobayashi, N. P. and Ramachandran, T. R. and Chen, P. and Madhukar, A.}, year={1996}, month=jun, pages={3299–3301} }

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