DOI: 10.1063/1.116577. Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy

Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy

10.1063/1.116577

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have fabricated erbium–oxygen-doped silicon light emitting diodes with molecular beam epitaxy by simultaneously evaporating erbium and silicon and providing a suitable background pressure of oxygen. In reverse bias, the diodes show intense room-temperature electroluminescence at λ=1.54 μm, originating from the intra-4f transition of erbium. This luminescence does not show temperature quenching between 4 and 300 K. In forward bias the erbium peak intensity is reduced by a factor of 30 at low temperatures and shows temperature quenching.

Bibliography

Stimmer, J., Reittinger, A., NÃ¼tzel, J. F., Abstreiter, G., Holzbrecher, H., & Buchal, Ch. (1996). Electroluminescence of erbiumâoxygen-doped silicon diodes grown by molecular beam epitaxy. Applied Physics Letters, 68(23), 3290â3292.

Authors 6

J. Stimmer (first)
A. Reittinger (additional)
J. F. Nützel (additional)
G. Abstreiter (additional)
H. Holzbrecher (additional)
Ch. Buchal (additional)

References 14 Referenced 136

{'key': '2024020310534522200_r1', 'first-page': '381', 'article-title': 'Appl. Phys. Lett.', 'volume': '46', 'year': '1985'} / Appl. Phys. Lett. (1985)
{'key': '2024020310534522200_r2', 'first-page': '2672', 'article-title': 'J. Appl. Phys.', 'volume': '70', 'year': '1991'} / J. Appl. Phys. (1991)
{'key': '2024020310534522200_r3', 'first-page': '11782', 'article-title': 'Phys. Rev. B', 'volume': '48', 'year': '1993'} / Phys. Rev. B (1993)
{'key': '2024020310534522200_r4', 'first-page': '16313', 'article-title': 'Phys. Rev. B', 'volume': '49', 'year': '1994'} / Phys. Rev. B (1994)
{'key': '2024020310534522200_r5', 'first-page': '3874', 'article-title': 'J. Appl. Phys.', 'volume': '78', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020310534522200_r6', 'first-page': '2235', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310534522200_r7', 'first-page': '2842', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310534522200_r8'}
{'key': '2024020310534522200_r9', 'first-page': '236', 'article-title': 'Semicond. Sci. Technol.', 'volume': '8', 'year': '1993'} / Semicond. Sci. Technol. (1993)
{'key': '2024020310534522200_r10', 'first-page': '1385', 'article-title': 'Appl. Phys. Lett.', 'volume': '66', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020310534522200_r11', 'first-page': '6241', 'article-title': 'J. Appl. Phys.', 'volume': '78', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020310534522200_r12', 'first-page': '1862', 'article-title': 'Appl. Phys. Lett.', 'volume': '66', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020310534522200_r13', 'first-page': '937', 'article-title': 'J. Appl. Phys.', 'volume': '78', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020310534522200_r14', 'first-page': '1', 'article-title': 'Appl. Phys. Lett. A', 'volume': '36', 'year': '1985'} / Appl. Phys. Lett. A (1985)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:53 a.m.)
Indexed	5 months ago (March 30, 2025, 5:29 a.m.)
Issued	29 years, 2 months ago (June 3, 1996)
Published	29 years, 2 months ago (June 3, 1996)
Published Print	29 years, 2 months ago (June 3, 1996)

Funders 0

None

BibTeX

@article{Stimmer_1996, title={Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116577}, DOI={10.1063/1.116577}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Stimmer, J. and Reittinger, A. and Nützel, J. F. and Abstreiter, G. and Holzbrecher, H. and Buchal, Ch.}, year={1996}, month=jun, pages={3290–3292} }

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