DOI: 10.1063/1.116554. Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon

Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon

10.1063/1.116554

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Si ions were implanted into thermally grown SiO2 films on crystalline Si at an energy of 120 keV and with a dose of 1016 cm−2. Under an ultraviolet excitation of ∼5.0 eV, the implanted films exhibit blue luminescence with a peak of ∼2.7 eV at room temperature. The blue emission is caused by oxygen vacancies in the films.

Bibliography

Liao, L.-S., Bao, X.-M., Zheng, X.-Q., Li, N.-S., & Min, N.-B. (1996). Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon. Applied Physics Letters, 68(6), 850â852.

Authors 5

Liang-Sheng Liao (first)
Xi-Mao Bao (additional)
Xiang-Qin Zheng (additional)
Ning-Sheng Li (additional)
Nai-Ben Min (additional)

References 19 Referenced 225

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:20 a.m.)
Indexed	2 months, 4 weeks ago (May 28, 2025, 10:03 a.m.)
Issued	29 years, 6 months ago (Feb. 5, 1996)
Published	29 years, 6 months ago (Feb. 5, 1996)
Published Print	29 years, 6 months ago (Feb. 5, 1996)

Funders 0

None

BibTeX

@article{Liao_1996, title={Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116554}, DOI={10.1063/1.116554}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liao, Liang-Sheng and Bao, Xi-Mao and Zheng, Xiang-Qin and Li, Ning-Sheng and Min, Nai-Ben}, year={1996}, month=feb, pages={850–852} }

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