DOI: 10.1063/1.116355. Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy

Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy

10.1063/1.116355

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

X-ray photoemission spectroscopy has been used to measure the valence band offset ΔEv for the AlN/GaN (0001) heterojunction interface. The heterojunction samples were grown by reactive molecular beam epitaxy on 6H–SiC (0001) substrates. A nested interface band alignment with ΔEv=1.36±0.07 eV is obtained (ΔEc/ΔEv=52/48).

Bibliography

Waldrop, J. R., & Grant, R. W. (1996). Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy. Applied Physics Letters, 68(20), 2879â2881.

Authors 2

J. R. Waldrop (first)
R. W. Grant (additional)

References 21 Referenced 238

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:48 a.m.)
Indexed	2 weeks, 5 days ago (Aug. 7, 2025, 4:34 p.m.)
Issued	29 years, 3 months ago (May 13, 1996)
Published	29 years, 3 months ago (May 13, 1996)
Published Print	29 years, 3 months ago (May 13, 1996)

Funders 0

None

BibTeX

@article{Waldrop_1996, title={Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116355}, DOI={10.1063/1.116355}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Waldrop, J. R. and Grant, R. W.}, year={1996}, month=may, pages={2879–2881} }

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