DOI: 10.1063/1.116172. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

10.1063/1.116172

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10–50 are observed. A plausible physical theory suggests that the benefits of deuterium use may be general and also applicable to other areas of semiconductor device processing and fabrication.

Bibliography

Lyding, J. W., Hess, K., & Kizilyalli, I. C. (1996). Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing. Applied Physics Letters, 68(18), 2526â2528.

Authors 3

J. W. Lyding (first)
K. Hess (additional)
I. C. Kizilyalli (additional)

References 10 Referenced 323

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{'key': '2024020310442932300_r3', 'first-page': '2010', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1995'} / Appl. Phys. Lett. (1995)
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{'key': '2024020310442932300_r6', 'first-page': '440', 'article-title': 'IEEE Trans. Semicond. Manuf.', 'volume': '8', 'year': '1995'} / IEEE Trans. Semicond. Manuf. (1995)
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{'key': '2024020310442932300_r8'}
{'key': '2024020310442932300_r9', 'first-page': '1590', 'article-title': 'Science', 'volume': '268', 'year': '1995'} / Science (1995)
{'key': '2024020310442932300_r10', 'first-page': '2220', 'article-title': 'IEEE Trans. Nucl. Sci.', 'volume': '39', 'year': '1992'} / IEEE Trans. Nucl. Sci. (1992)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:44 a.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 11:20 a.m.)
Issued	29 years, 4 months ago (April 29, 1996)
Published	29 years, 4 months ago (April 29, 1996)
Published Print	29 years, 4 months ago (April 29, 1996)

Funders 0

None

BibTeX

@article{Lyding_1996, title={Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116172}, DOI={10.1063/1.116172}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lyding, J. W. and Hess, K. and Kizilyalli, I. C.}, year={1996}, month=apr, pages={2526–2528} }

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