DOI: 10.1063/1.116124. Luminescence quenching in erbium-doped hydrogenated amorphous silicon

Luminescence quenching in erbium-doped hydrogenated amorphous silicon

10.1063/1.116124

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 μm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.

Bibliography

Shin, J. H., Serna, R., van den Hoven, G. N., Polman, A., van Sark, W. G. J. H. M., & Vredenberg, A. M. (1996). Luminescence quenching in erbium-doped hydrogenated amorphous silicon. Applied Physics Letters, 68(7), 997â999.

Authors 6

Jung H. Shin (first)
R. Serna (additional)
G. N. van den Hoven (additional)
A. Polman (additional)
W. G. J. H. M. van Sark (additional)
A. M. Vredenberg (additional)

References 15 Referenced 69

{'key': '2024020310242969000_r1'}
{'key': '2024020310242969000_r2', 'first-page': '943', 'article-title': 'Appl. Phys. Lett.', 'volume': '43', 'year': '1983'} / Appl. Phys. Lett. (1983)
{'key': '2024020310242969000_r3', 'first-page': '2672', 'article-title': 'J. Appl. Phys.', 'volume': '70', 'year': '1991'} / J. Appl. Phys. (1991)
{'key': '2024020310242969000_r4', 'first-page': '2644', 'article-title': 'J. Appl. Phys.', 'volume': '75', 'year': '1994'} / J. Appl. Phys. (1994)
{'key': '2024020310242969000_r5', 'first-page': '16313', 'article-title': 'Phys. Rev. B', 'volume': '49', 'year': '1994'} / Phys. Rev. B (1994)
{'key': '2024020310242969000_r6', 'first-page': '2235', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310242969000_r7', 'first-page': '2842', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310242969000_r8', 'first-page': '2797', 'article-title': 'Appl. Phys. Lett.', 'volume': '58', 'year': '1991'} / Appl. Phys. Lett. (1991)
{'key': '2024020310242969000_r9', 'first-page': '1256', 'article-title': 'J. Appl. Phys.', 'volume': '77', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020310242969000_r10', 'first-page': '3874', 'article-title': 'J. Appl. Phys.', 'volume': '78', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020310242969000_r11', 'first-page': '51', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '235', 'year': '1992'} / Mater. Res. Soc. Symp. Proc. (1992)
{'key': '2024020310242969000_r12', 'first-page': '2642', 'article-title': 'J. Appl. Phys.', 'volume': '78', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020310242969000_r13', 'first-page': '6504', 'article-title': 'J. Appl. Phys.', 'volume': '77', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020310242969000_r14', 'first-page': '2181', 'article-title': 'Appl. Phys. Lett.', 'volume': '61', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020310242969000_r15', 'first-page': '181', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '301', 'year': '1993'} / Mater. Res. Soc. Symp. Proc. (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 5:24 a.m.)
Indexed	1 month, 1 week ago (July 23, 2025, 9 a.m.)
Issued	29 years, 6 months ago (Feb. 12, 1996)
Published	29 years, 6 months ago (Feb. 12, 1996)
Published Print	29 years, 6 months ago (Feb. 12, 1996)

Funders 0

None

BibTeX

@article{Shin_1996, title={Luminescence quenching in erbium-doped hydrogenated amorphous silicon}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116124}, DOI={10.1063/1.116124}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shin, Jung H. and Serna, R. and van den Hoven, G. N. and Polman, A. and van Sark, W. G. J. H. M. and Vredenberg, A. M.}, year={1996}, month=feb, pages={997–999} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        23
      ]
    ],
    "date-time": "2025-07-23T13:00:59Z",
    "timestamp": 1753275659379
  },
  "reference-count": 15,
  "publisher": "AIP Publishing",
  "issue": "7",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        2,
        12
      ]
    ]
  },
  "abstract": "<jats:p>Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 \u03bcm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300\u2013400\u2009\u00b0C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at.\u2009%) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.</jats:p>",
  "DOI": "10.1063/1.116124",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:46:20Z",
    "timestamp": 1027687580000
  },
  "page": "997-999",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 69,
  "title": "Luminescence quenching in erbium-doped hydrogenated amorphous silicon",
  "prefix": "10.1063",
  "volume": "68",
  "author": [
    {
      "given": "Jung H.",
      "family": "Shin",
      "sequence": "first",
      "affiliation": [
        {
          "name": "FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the Netherlands"
        }
      ]
    },
    {
      "given": "R.",
      "family": "Serna",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the Netherlands"
        }
      ]
    },
    {
      "given": "G. N.",
      "family": "van den Hoven",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the Netherlands"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Polman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the Netherlands"
        }
      ]
    },
    {
      "given": "W. G. J. H. M.",
      "family": "van Sark",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Atomic and Interface Physics, Debye Institute, University of Utrecht, P. O. Box 80000, 3508 TA Utrecht, the Netherlands"
        }
      ]
    },
    {
      "given": "A. M.",
      "family": "Vredenberg",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Atomic and Interface Physics, Debye Institute, University of Utrecht, P. O. Box 80000, 3508 TA Utrecht, the Netherlands"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020310242969000_r1"
    },
    {
      "key": "2024020310242969000_r2",
      "first-page": "943",
      "article-title": "Appl. Phys. Lett.",
      "volume": "43",
      "year": "1983"
    },
    {
      "key": "2024020310242969000_r3",
      "first-page": "2672",
      "article-title": "J. Appl. Phys.",
      "volume": "70",
      "year": "1991"
    },
    {
      "key": "2024020310242969000_r4",
      "first-page": "2644",
      "article-title": "J. Appl. Phys.",
      "volume": "75",
      "year": "1994"
    },
    {
      "key": "2024020310242969000_r5",
      "first-page": "16313",
      "article-title": "Phys. Rev. B",
      "volume": "49",
      "year": "1994"
    },
    {
      "key": "2024020310242969000_r6",
      "first-page": "2235",
      "article-title": "Appl. Phys. Lett.",
      "volume": "64",
      "year": "1994"
    },
    {
      "key": "2024020310242969000_r7",
      "first-page": "2842",
      "article-title": "Appl. Phys. Lett.",
      "volume": "64",
      "year": "1994"
    },
    {
      "key": "2024020310242969000_r8",
      "first-page": "2797",
      "article-title": "Appl. Phys. Lett.",
      "volume": "58",
      "year": "1991"
    },
    {
      "key": "2024020310242969000_r9",
      "first-page": "1256",
      "article-title": "J. Appl. Phys.",
      "volume": "77",
      "year": "1995"
    },
    {
      "key": "2024020310242969000_r10",
      "first-page": "3874",
      "article-title": "J. Appl. Phys.",
      "volume": "78",
      "year": "1995"
    },
    {
      "key": "2024020310242969000_r11",
      "first-page": "51",
      "article-title": "Mater. Res. Soc. Symp. Proc.",
      "volume": "235",
      "year": "1992"
    },
    {
      "key": "2024020310242969000_r12",
      "first-page": "2642",
      "article-title": "J. Appl. Phys.",
      "volume": "78",
      "year": "1995"
    },
    {
      "key": "2024020310242969000_r13",
      "first-page": "6504",
      "article-title": "J. Appl. Phys.",
      "volume": "77",
      "year": "1995"
    },
    {
      "key": "2024020310242969000_r14",
      "first-page": "2181",
      "article-title": "Appl. Phys. Lett.",
      "volume": "61",
      "year": "1992"
    },
    {
      "key": "2024020310242969000_r15",
      "first-page": "181",
      "article-title": "Mater. Res. Soc. Symp. Proc.",
      "volume": "301",
      "year": "1993"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/68/7/997/18517263/997_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/68/7/997/18517263/997_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T10:24:34Z",
    "timestamp": 1706955874000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/68/7/997/66144/Luminescence-quenching-in-erbium-doped"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        2,
        12
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          1996,
          2,
          12
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.116124",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        2,
        12
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        2,
        12
      ]
    ]
  }
}