DOI: 10.1063/1.116027. Role of hydrogen in doping of GaN

10.1063/1.116027

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We investigate the interactions between hydrogen and dopant impurities in GaN, using state-of-the-art first-principles calculations. Our results for energetics and migration reveal a fundamental difference in the behavior of hydrogen between p-type and n-type material; in particular, we explain why hydrogen concentrations in n-type GaN are low, and why hydrogen has a beneficial effect on acceptor incorporation in p-type GaN. Our results identify the conditions under which hydrogen can be used to control doping in semiconductors in general.

Bibliography

Neugebauer, J., & Van de Walle, C. G. (1996). Role of hydrogen in doping of GaN. Applied Physics Letters, 68(13), 1829â1831.

Authors 2

Jörg Neugebauer (first)
Chris G. Van de Walle (additional)

References 13 Referenced 309

{'key': '2024020310344594800_r1', 'first-page': 'L2112', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '28', 'year': '1989'} / Jpn. J. Appl. Phys. (1989)
{'key': '2024020310344594800_r2', 'first-page': '1258', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '31', 'year': '1992'} / Jpn. J. Appl. Phys. (1992)
{'key': '2024020310344594800_r3', 'first-page': '3662', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '31', 'year': '1992'} / Jpn. J. Appl. Phys. (1992)
{'key': '2024020310344594800_r4', 'first-page': '4452', 'article-title': 'Phys. Rev. Lett.', 'volume': '75', 'year': '1995'} / Phys. Rev. Lett. (1995)
{'key': '2024020310344594800_r5', 'first-page': '8067', 'article-title': 'Phys. Rev. B', 'volume': '50', 'year': '1994'} / Phys. Rev. B (1994)
{'key': '2024020310344594800_r6'}
{'key': '2024020310344594800_r7', 'first-page': '666', 'article-title': 'J. Lumin.', 'volume': '48&49', 'year': '1991'} / J. Lumin. (1991)
{'key': '2024020310344594800_r8', 'first-page': '648', 'article-title': 'Phys. Rev. Lett.', 'volume': '66', 'year': '1991'} / Phys. Rev. Lett. (1991)
{'key': '2024020310344594800_r9'}
{'key': '2024020310344594800_r10', 'first-page': '932', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020310344594800_r11'}
{'key': '2024020310344594800_r12', 'first-page': '13549', 'article-title': 'Phys. Rev. B', 'volume': '39', 'year': '1989'} / Phys. Rev. B (1989)
{'key': '2024020310344594800_r13'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:34 a.m.)
Indexed	3 days, 7 hours ago (Aug. 23, 2025, 9:21 p.m.)
Issued	29 years, 5 months ago (March 25, 1996)
Published	29 years, 5 months ago (March 25, 1996)
Published Print	29 years, 5 months ago (March 25, 1996)

Funders 0

None

BibTeX

@article{Neugebauer_1996, title={Role of hydrogen in doping of GaN}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.116027}, DOI={10.1063/1.116027}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Neugebauer, Jörg and Van de Walle, Chris G.}, year={1996}, month=mar, pages={1829–1831} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        24
      ]
    ],
    "date-time": "2025-08-24T01:21:28Z",
    "timestamp": 1755998488168
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "13",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        3,
        25
      ]
    ]
  },
  "abstract": "<jats:p>We investigate the interactions between hydrogen and dopant impurities in GaN, using state-of-the-art first-principles calculations. Our results for energetics and migration reveal a fundamental difference in the behavior of hydrogen between p-type and n-type material; in particular, we explain why hydrogen concentrations in n-type GaN are low, and why hydrogen has a beneficial effect on acceptor incorporation in p-type GaN. Our results identify the conditions under which hydrogen can be used to control doping in semiconductors in general.</jats:p>",
  "DOI": "10.1063/1.116027",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:40:49Z",
    "timestamp": 1027690849000
  },
  "page": "1829-1831",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 309,
  "title": "Role of hydrogen in doping of GaN",
  "prefix": "10.1063",
  "volume": "68",
  "author": [
    {
      "given": "J\u00f6rg",
      "family": "Neugebauer",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    },
    {
      "given": "Chris G.",
      "family": "Van de Walle",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020310344594800_r1",
      "first-page": "L2112",
      "article-title": "Jpn. J. Appl. Phys.",
      "volume": "28",
      "year": "1989"
    },
    {
      "key": "2024020310344594800_r2",
      "first-page": "1258",
      "article-title": "Jpn. J. Appl. Phys.",
      "volume": "31",
      "year": "1992"
    },
    {
      "key": "2024020310344594800_r3",
      "first-page": "3662",
      "article-title": "Jpn. J. Appl. Phys.",
      "volume": "31",
      "year": "1992"
    },
    {
      "key": "2024020310344594800_r4",
      "first-page": "4452",
      "article-title": "Phys. Rev. Lett.",
      "volume": "75",
      "year": "1995"
    },
    {
      "key": "2024020310344594800_r5",
      "first-page": "8067",
      "article-title": "Phys. Rev. B",
      "volume": "50",
      "year": "1994"
    },
    {
      "key": "2024020310344594800_r6"
    },
    {
      "key": "2024020310344594800_r7",
      "first-page": "666",
      "article-title": "J. Lumin.",
      "volume": "48&49",
      "year": "1991"
    },
    {
      "key": "2024020310344594800_r8",
      "first-page": "648",
      "article-title": "Phys. Rev. Lett.",
      "volume": "66",
      "year": "1991"
    },
    {
      "key": "2024020310344594800_r9"
    },
    {
      "key": "2024020310344594800_r10",
      "first-page": "932",
      "article-title": "Appl. Phys. Lett.",
      "volume": "63",
      "year": "1993"
    },
    {
      "key": "2024020310344594800_r11"
    },
    {
      "key": "2024020310344594800_r12",
      "first-page": "13549",
      "article-title": "Phys. Rev. B",
      "volume": "39",
      "year": "1989"
    },
    {
      "key": "2024020310344594800_r13"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/68/13/1829/18518041/1829_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/68/13/1829/18518041/1829_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T10:34:52Z",
    "timestamp": 1706956492000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/68/13/1829/521858/Role-of-hydrogen-in-doping-of-GaN"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        3,
        25
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "13",
    "published-print": {
      "date-parts": [
        [
          1996,
          3,
          25
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.116027",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        3,
        25
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        3,
        25
      ]
    ]
  }
}