Abstract
A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes.
References
7
Referenced
208
{'key': '2024020310271749900_r1', 'first-page': '114', 'article-title': 'IBM J. Res. Dev.', 'volume': '21', 'year': '1988'}
/ IBM J. Res. Dev. (1988){'key': '2024020310271749900_r2', 'first-page': '4562', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '34', 'year': '1995'}
/ Jpn. J. Appl. Phys. (1995){'key': '2024020310271749900_r3', 'first-page': '524', 'article-title': 'Nature', 'volume': '344', 'year': '1991'}
/ Nature (1991){'key': '2024020310271749900_r4', 'first-page': '344', 'article-title': 'Nature', 'volume': '344', 'year': '1991'}
/ Nature (1991){'key': '2024020310271749900_r5'}
{'key': '2024020310271749900_r6'}
{'key': '2024020310271749900_r7', 'first-page': '764', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'}
/ Appl. Phys. Lett. (1993)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:40 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 5:27 a.m.) |
Indexed | 3 months ago (June 2, 2025, 12:22 a.m.) |
Issued | 29 years, 6 months ago (Feb. 26, 1996) |
Published | 29 years, 6 months ago (Feb. 26, 1996) |
Published Print | 29 years, 6 months ago (Feb. 26, 1996) |
@article{Fujita_1996, title={Ultrahigh resolution of calixarene negative resist in electron beam lithography}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115958}, DOI={10.1063/1.115958}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fujita, J. and Ohnishi, Y. and Ochiai, Y. and Matsui, S.}, year={1996}, month=feb, pages={1297–1299} }