Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes.

Bibliography

Fujita, J., Ohnishi, Y., Ochiai, Y., & Matsui, S. (1996). Ultrahigh resolution of calixarene negative resist in electron beam lithography. Applied Physics Letters, 68(9), 1297–1299.

Authors 4
  1. J. Fujita (first)
  2. Y. Ohnishi (additional)
  3. Y. Ochiai (additional)
  4. S. Matsui (additional)
References 7 Referenced 208
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 5:27 a.m.)
Indexed 3 months ago (June 2, 2025, 12:22 a.m.)
Issued 29 years, 6 months ago (Feb. 26, 1996)
Published 29 years, 6 months ago (Feb. 26, 1996)
Published Print 29 years, 6 months ago (Feb. 26, 1996)
Funders 0

None

@article{Fujita_1996, title={Ultrahigh resolution of calixarene negative resist in electron beam lithography}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115958}, DOI={10.1063/1.115958}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fujita, J. and Ohnishi, Y. and Ochiai, Y. and Matsui, S.}, year={1996}, month=feb, pages={1297–1299} }