Abstract
We describe a 1 THz quasioptical SIS mixer which uses a twin-slot antenna, an antireflection-coated silicon hyperhemispherical lens, Nb/Al-oxide/Nb tunnel junctions, and an aluminum normal-metal tuning circuit in a two-junction configuration. Since the mixer operates substantially above the gap frequency of niobium (ν≳2Δ/h∼700 GHz), a normal metal is used in the tuning circuit in place of niobium to reduce the Ohmic loss. The frequency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. At 1042 GHz, the uncorrected double-sideband receiver noise temperature is 840 K when the physical temperature of the mixer is 2.5 K. This is the first SIS mixer which outperforms GaAs Schottky diode mixers by a large margin at 1 THz.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 8:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 5:31 a.m.) |
Indexed | 2 months, 3 weeks ago (May 26, 2025, 9:44 a.m.) |
Issued | 29 years, 5 months ago (March 18, 1996) |
Published | 29 years, 5 months ago (March 18, 1996) |
Published Print | 29 years, 5 months ago (March 18, 1996) |
@article{Bin_1996, title={Low-noise 1 THz niobium superconducting tunnel junction mixer with a normal metal tuning circuit}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115915}, DOI={10.1063/1.115915}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bin, M. and Gaidis, M. C. and Zmuidzinas, J. and Phillips, T. G. and LeDuc, H. G.}, year={1996}, month=mar, pages={1714–1716} }