DOI: 10.1063/1.115759. A ferroelectric transparent thin-film transistor

A ferroelectric transparent thin-film transistor

10.1063/1.115759

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8O3 as a ferroelectric insulator, and SrRuO3 as a gate electrode, each layer prepared by pulsed laser deposition. The hysteresis behavior of the channel conductance is studied. Using gate voltage pulses of 100 μs duration and a pulse height of ±3 V, a change of a factor of two in the remnant conductance is achieved. The dependence of the conductance on the polarity of the gate pulse proves that the memory effect is driven by the ferroelectric polarization. The influence of charge trapping is also observed and discussed.

Bibliography

Prins, M. W. J., Grosse-Holz, K.-O., MÃ¼ller, G., Cillessen, J. F. M., Giesbers, J. B., Weening, R. P., & Wolf, R. M. (1996). A ferroelectric transparent thin-film transistor. Applied Physics Letters, 68(25), 3650â3652.

Authors 7

M. W. J. Prins (first)
K.-O. Grosse-Holz (additional)
G. Müller (additional)
J. F. M. Cillessen (additional)
J. B. Giesbers (additional)
R. P. Weening (additional)
R. M. Wolf (additional)

References 20 Referenced 177

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{'key': '2024020310594616300_r8', 'first-page': '3525', 'article-title': 'Rev. Sci. Instrum.', 'volume': '63', 'year': '1992'} / Rev. Sci. Instrum. (1992)
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{'key': '2024020310594616300_r10', 'first-page': '375', 'article-title': 'Semicond. Sci. Technol.', 'volume': '10', 'year': '1995'} / Semicond. Sci. Technol. (1995)
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{'key': '2024020310594616300_r13', 'first-page': '127', 'article-title': 'Thin Solid Films', 'volume': '251', 'year': '1994'} / Thin Solid Films (1994)
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{'key': '2024020310594616300_r19', 'first-page': '611', 'article-title': 'Appl. Phys. Lett.', 'volume': '59', 'year': '1991'} / Appl. Phys. Lett. (1991)
{'key': '2024020310594616300_r20'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 5:59 a.m.)
Indexed	5 days, 3 hours ago (Aug. 29, 2025, 6:29 a.m.)
Issued	29 years, 2 months ago (June 17, 1996)
Published	29 years, 2 months ago (June 17, 1996)
Published Print	29 years, 2 months ago (June 17, 1996)

Funders 0

None

BibTeX

@article{Prins_1996, title={A ferroelectric transparent thin-film transistor}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115759}, DOI={10.1063/1.115759}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Prins, M. W. J. and Grosse-Holz, K.-O. and Müller, G. and Cillessen, J. F. M. and Giesbers, J. B. and Weening, R. P. and Wolf, R. M.}, year={1996}, month=jun, pages={3650–3652} }

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