Abstract
We use Fowler–Nordheim tunneling current oscillations to accurately determine the thicknesses of ultrathin SiO2 films, and with the thicknesses as input, we employ precision single wavelength ellipsometry to determine the real part of the refractive index for thin SiO2 films in the range of 4–6 nm. An average value for this refractive index was found to be 1.894±0.110. This value is shown to yield SiO2 thicknesses to an accuracy of ±0.1 nm. A SiO2 thickness-refractive index interpolation formula for the thin film regime is given.
References
17
Referenced
39
{'key': '2024020310121893100_r1', 'first-page': '75', 'article-title': 'Semicond. Int.', 'volume': '18', 'year': '1995'}
/ Semicond. Int. (1995){'key': '2024020310121893100_r2', 'first-page': '234', 'article-title': 'J. Electrochem. Soc.', 'volume': '137', 'year': '1990'}
/ J. Electrochem. Soc. (1990){'key': '2024020310121893100_r3', 'first-page': '3536', 'article-title': 'J. Electrochem. Soc.', 'volume': '137', 'year': '1990'}
/ J. Electrochem. Soc. (1990){'key': '2024020310121893100_r4'}
{'key': '2024020310121893100_r5', 'first-page': '1031', 'article-title': 'Appl. Phys. Lett.', 'volume': '67', 'year': '1995'}
/ Appl. Phys. Lett. (1995){'key': '2024020310121893100_r6', 'first-page': '47', 'article-title': 'J. Vac. Sci. Technol. A', 'volume': '13', 'year': '1995'}
/ J. Vac. Sci. Technol. A (1995){'key': '2024020310121893100_r7', 'first-page': '363', 'article-title': 'J. Res. Natl. Bur. Stand.', 'volume': '67A', 'year': '1963'}
/ J. Res. Natl. Bur. Stand. (1963){'key': '2024020310121893100_r8'}
{'key': '2024020310121893100_r9', 'first-page': '131', 'article-title': 'J. Electrochem. Soc.', 'volume': '126', 'year': '1979'}
/ J. Electrochem. Soc. (1979){'key': '2024020310121893100_r10', 'first-page': '1359', 'article-title': 'J. Electrochem. Soc.', 'volume': '127', 'year': '1980'}
/ J. Electrochem. Soc. (1980){'key': '2024020310121893100_r11', 'first-page': '530', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '5', 'year': '1987'}
/ J. Vac. Sci. Technol. B (1987){'key': '2024020310121893100_r12'}
{'key': '2024020310121893100_r13', 'first-page': '2594', 'article-title': 'J. Electrochem. Soc.', 'volume': '129', 'year': '1982'}
/ J. Electrochem. Soc. (1982){'key': '2024020310121893100_r14', 'first-page': '574', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '6', 'year': '1988'}
/ J. Vac. Sci. Technol. B (1988){'key': '2024020310121893100_r15', 'first-page': '2815', 'article-title': 'J. Electrochem. Soc.', 'volume': '132', 'year': '1985'}
/ J. Electrochem. Soc. (1985){'key': '2024020310121893100_r16', 'first-page': '968', 'article-title': 'J. Electrochem. Soc.', 'volume': '125', 'year': '1978'}
/ J. Electrochem. Soc. (1978){'key': '2024020310121893100_r17', 'first-page': '396', 'article-title': 'J. Electrochem. Soc.', 'volume': '127', 'year': '1980'}
/ J. Electrochem. Soc. (1980)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:40 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 5:12 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 11:01 a.m.) |
Issued | 29 years, 7 months ago (Jan. 8, 1996) |
Published | 29 years, 7 months ago (Jan. 8, 1996) |
Published Print | 29 years, 7 months ago (Jan. 8, 1996) |
@article{Hebert_1996, title={Measurement of the refractive index of thin SiO2 films using tunneling current oscillations and ellipsometry}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115658}, DOI={10.1063/1.115658}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hebert, K. J. and Zafar, S. and Irene, E. A. and Kuehn, R. and McCarthy, T. E. and Demirlioglu, E. K.}, year={1996}, month=jan, pages={266–268} }