Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We use Fowler–Nordheim tunneling current oscillations to accurately determine the thicknesses of ultrathin SiO2 films, and with the thicknesses as input, we employ precision single wavelength ellipsometry to determine the real part of the refractive index for thin SiO2 films in the range of 4–6 nm. An average value for this refractive index was found to be 1.894±0.110. This value is shown to yield SiO2 thicknesses to an accuracy of ±0.1 nm. A SiO2 thickness-refractive index interpolation formula for the thin film regime is given.

Bibliography

Hebert, K. J., Zafar, S., Irene, E. A., Kuehn, R., McCarthy, T. E., & Demirlioglu, E. K. (1996). Measurement of the refractive index of thin SiO2 films using tunneling current oscillations and ellipsometry. Applied Physics Letters, 68(2), 266–268.

Authors 6
  1. K. J. Hebert (first)
  2. S. Zafar (additional)
  3. E. A. Irene (additional)
  4. R. Kuehn (additional)
  5. T. E. McCarthy (additional)
  6. E. K. Demirlioglu (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 5:12 a.m.)
Indexed 1 year, 6 months ago (Feb. 10, 2024, 11:01 a.m.)
Issued 29 years, 7 months ago (Jan. 8, 1996)
Published 29 years, 7 months ago (Jan. 8, 1996)
Published Print 29 years, 7 months ago (Jan. 8, 1996)
Funders 0

None

@article{Hebert_1996, title={Measurement of the refractive index of thin SiO2 films using tunneling current oscillations and ellipsometry}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115658}, DOI={10.1063/1.115658}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hebert, K. J. and Zafar, S. and Irene, E. A. and Kuehn, R. and McCarthy, T. E. and Demirlioglu, E. K.}, year={1996}, month=jan, pages={266–268} }