DOI: 10.1063/1.115634. Ca and O ion implantation doping of GaN

10.1063/1.115634

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

p- and n-type doping of GaN have been realized by ion implantation of Ca and O, respectively. Rapid thermal annealing at 1100 °C or higher is required to achieve p-type conduction in Ca or Ca+P implanted samples with an estimated ionization level of 169 meV and a corresponding activation efficiency of ∼100%. This is the first experimental report of an acceptor species in GaN, other than Mg, with an ionization energy level less than 180 meV. O-implanted GaN displays an ionization level of ∼29 meV but with an activation efficiency of only 3.6% after a 1050 °C anneal that may result from insufficient vacancy generation for the lighter O ion or from the existence of a second, deeper O energy level. Neither Ca or O displayed measurable redistribution, based on secondary ion mass spectrometry measurements, even after a 1125 °C anneal.

Bibliography

Zolper, J. C., Wilson, R. G., Pearton, S. J., & Stall, R. A. (1996). Ca and O ion implantation doping of GaN. Applied Physics Letters, 68(14), 1945â1947.

Authors 4

J. C. Zolper (first)
R. G. Wilson (additional)
S. J. Pearton (additional)
R. A. Stall (additional)

References 18 Referenced 175

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{'key': '2024020310355467600_r2', 'first-page': '1687', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310355467600_r3', 'first-page': '1214', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 5:35 a.m.)
Indexed	3 months, 1 week ago (May 27, 2025, 5:44 a.m.)
Issued	29 years, 5 months ago (April 1, 1996)
Published	29 years, 5 months ago (April 1, 1996)
Published Print	29 years, 5 months ago (April 1, 1996)

Funders 0

None

BibTeX

@article{Zolper_1996, title={Ca and O ion implantation doping of GaN}, volume={68}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115634}, DOI={10.1063/1.115634}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zolper, J. C. and Wilson, R. G. and Pearton, S. J. and Stall, R. A.}, year={1996}, month=apr, pages={1945–1947} }

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