DOI: 10.1063/1.115385. Kinetics of photoconductivity in <i>n</i>-type GaN photodetector

Kinetics of photoconductivity in n-type GaN photodetector

10.1063/1.115385

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency-dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation-dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level.

Bibliography

Kung, P., Zhang, X., Walker, D., Saxler, A., Piotrowski, J., Rogalski, A., & Razeghi, M. (1995). Kinetics of photoconductivity in n-type GaN photodetector. Applied Physics Letters, 67(25), 3792â3794.

Authors 7

P. Kung (first)
X. Zhang (additional)
D. Walker (additional)
A. Saxler (additional)
J. Piotrowski (additional)
A. Rogalski (additional)
M. Razeghi (additional)

References 15 Referenced 68

{'key': '2024020310065760100_r1', 'first-page': '1363', 'article-title': 'J. Appl. Phys.', 'volume': '76', 'year': '1994'} / J. Appl. Phys. (1994)
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{'key': '2024020310065760100_r4'}
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{'key': '2024020310065760100_r6'}
{'key': '2024020310065760100_r7', 'first-page': '3611', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:07 a.m.)
Indexed	1 year, 1 month ago (June 26, 2024, 5:50 p.m.)
Issued	29 years, 8 months ago (Dec. 18, 1995)
Published	29 years, 8 months ago (Dec. 18, 1995)
Published Print	29 years, 8 months ago (Dec. 18, 1995)

Funders 0

None

BibTeX

@article{Kung_1995, title={Kinetics of photoconductivity in n-type GaN photodetector}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115385}, DOI={10.1063/1.115385}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kung, P. and Zhang, X. and Walker, D. and Saxler, A. and Piotrowski, J. and Rogalski, A. and Razeghi, M.}, year={1995}, month=dec, pages={3792–3794} }

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