DOI: 10.1063/1.115316. Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)

Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)

10.1063/1.115316

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Pseudomorphic Si1−x−yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si1−x−yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si1−x−yGexCy alloys.

Bibliography

St. Amour, A., Liu, C. W., Sturm, J. C., Lacroix, Y., & Thewalt, M. L. W. (1995). Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1âxâyGexCy alloy layers on Si (100). Applied Physics Letters, 67(26), 3915â3917.

Authors 5

A. St. Amour (first)
C. W. Liu (additional)
J. C. Sturm (additional)
Y. Lacroix (additional)
M. L. W. Thewalt (additional)

References 16 Referenced 95

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{'key': '2024020310061127600_r2', 'first-page': '3033', 'article-title': 'Appl. Phys. Lett.', 'volume': '60', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020310061127600_r3', 'first-page': '57', 'article-title': 'Mater. Lett.', 'volume': '18', 'year': '1993'} / Mater. Lett. (1993)
{'key': '2024020310061127600_r4', 'first-page': '875', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310061127600_r5', 'first-page': '2011', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '9', 'year': '1991'} / J. Vac. Sci. Technol. B (1991)
{'key': '2024020310061127600_r6', 'first-page': '1362', 'article-title': 'Phys. Rev. Lett.', 'volume': '66', 'year': '1991'} / Phys. Rev. Lett. (1991)
{'key': '2024020310061127600_r7', 'first-page': '1720', 'article-title': 'Appl. Phys. Lett.', 'volume': '60', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020310061127600_r8', 'first-page': '5621', 'article-title': 'Phys. Rev. B', 'volume': '34', 'year': '1986'} / Phys. Rev. B (1986)
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{'key': '2024020310061127600_r16'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 5:06 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 10:38 p.m.)
Issued	29 years, 8 months ago (Dec. 25, 1995)
Published	29 years, 8 months ago (Dec. 25, 1995)
Published Print	29 years, 8 months ago (Dec. 25, 1995)

Funders 0

None

BibTeX

@article{St_Amour_1995, title={Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115316}, DOI={10.1063/1.115316}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={St. Amour, A. and Liu, C. W. and Sturm, J. C. and Lacroix, Y. and Thewalt, M. L. W.}, year={1995}, month=dec, pages={3915–3917} }

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