DOI: 10.1063/1.115256. Common origin for stress-induced leakage current and electron trap generation in SiO2

Common origin for stress-induced leakage current and electron trap generation in SiO2

10.1063/1.115256

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The origin of stress-induced leakage current in ultrathin SiO2 has been quantitatively investigated on the basis of the experimental results on temperature dependence of stress-induced leakage current. We found that stress-induced leakage current is dependent on stressing temperature, and that it is independent of measurement temperature. It has been quantitatively demonstrated for the first time that the activation energy of the appearance of stress-induced leakage current agrees well with that of electron trap generation so far reported. It is discussed quantitatively that stress-induced leakage current and electron trap generation have a common origin.

Bibliography

Satake, H., & Toriumi, A. (1995). Common origin for stress-induced leakage current and electron trap generation in SiO2. Applied Physics Letters, 67(23), 3489â3490.

Authors 2

Hideki Satake (first)
Akira Toriumi (additional)

References 8 Referenced 33

{'key': '2024020310025517000_r1'}
{'key': '2024020310025517000_r2', 'first-page': '632', 'article-title': 'Electron. Lett.', 'volume': '12', 'year': '1991'} / Electron. Lett. (1991)
{'key': '2024020310025517000_r3'}
{'key': '2024020310025517000_r4', 'first-page': '1809', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020310025517000_r5', 'first-page': '986', 'article-title': 'IEEE Trans. Electron Devices', 'volume': 'ED-40', 'year': '1993'} / IEEE Trans. Electron Devices (1993)
{'key': '2024020310025517000_r6', 'first-page': '2342', 'article-title': 'J. Appl. Phys.', 'volume': '65', 'year': '1989'} / J. Appl. Phys. (1989)
{'key': '2024020310025517000_r7', 'first-page': '2524', 'article-title': 'Appl. Phys. Lett.', 'volume': '58', 'year': '1985'} / Appl. Phys. Lett. (1985)
{'key': '2024020310025517000_r8', 'first-page': '2540', 'article-title': 'J. Appl. Phys.', 'volume': '54', 'year': '1983'} / J. Appl. Phys. (1983)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:42 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:03 a.m.)
Indexed	1 month ago (July 27, 2025, 3:20 a.m.)
Issued	29 years, 8 months ago (Dec. 4, 1995)
Published	29 years, 8 months ago (Dec. 4, 1995)
Published Print	29 years, 8 months ago (Dec. 4, 1995)

Funders 0

None

BibTeX

@article{Satake_1995, title={Common origin for stress-induced leakage current and electron trap generation in SiO2}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.115256}, DOI={10.1063/1.115256}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Satake, Hideki and Toriumi, Akira}, year={1995}, month=dec, pages={3489–3490} }

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