Abstract
We report on measurements of the potential profile of a GaAs/AlGaAs n-i-p-i multiple quantum well structure using a scanning Kelvin probe force microscope (KFM). Using this novel technique we directly measure with meV precision and sub-100 nm spatial resolution the potential difference between n-i-p-i layers with and without external optical excitation. The measured potential profiles, which have not been directly imaged previously, agree well with potential profiles calculated for optically excited n-i-p-i structures, but modified by band bending effects at the surface.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:40 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:56 a.m.) |
Indexed | 1 month, 4 weeks ago (June 30, 2025, 5:21 p.m.) |
Issued | 29 years, 9 months ago (Nov. 20, 1995) |
Published | 29 years, 9 months ago (Nov. 20, 1995) |
Published Print | 29 years, 9 months ago (Nov. 20, 1995) |
@article{Chavez_Pirson_1995, title={Nanometer-scale imaging of potential profiles in optically excited n-i-p-i heterostructure using Kelvin probe force microscopy}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114867}, DOI={10.1063/1.114867}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chavez-Pirson, A. and Vatel, O. and Tanimoto, M. and Ando, H. and Iwamura, H. and Kanbe, H.}, year={1995}, month=nov, pages={3069–3071} }