DOI: 10.1063/1.114797. Direct observation of transferred-electron effect in GaN

Direct observation of transferred-electron effect in GaN

10.1063/1.114797

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the direct observation of transferred-electron effect in unintentionally doped GaN epilayers grown by metalorganic chemical vapor deposition. The negative differential resistivity (NDR) was observed from the current-electric field characteristics in GaN using a metal-semiconductor-metal (M-S-M) system. The threshold field for the onset of NDR was independent of the spacing of M-S-M fingers, and was measured to be 1.91×105 V/cm for GaN with an n-type carrier concentration of 1014 cm−3. This value is very close to the value obtained from theoretical simulation. This observation is an experimental evidence of transferred-electron effects in GaN, which is important in understanding GaN energy band structure and in the application of Gunn-effect devices using GaN materials.

Bibliography

Huang, Z. C., Goldberg, R., Chen, J. C., Zheng, Y., Mott, D. B., & Shu, P. (1995). Direct observation of transferred-electron effect in GaN. Applied Physics Letters, 67(19), 2825â2826.

Authors 6

Z. C. Huang (first)
R. Goldberg (additional)
J. C. Chen (additional)
Youdou Zheng (additional)
D. Brent Mott (additional)
P. Shu (additional)

References 8 Referenced 45

{'key': '2024020309512701000_r1', 'first-page': 'L1998', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '30', 'year': '1991'} / Jpn. J. Appl. Phys. (1991)
{'key': '2024020309512701000_r2', 'first-page': '2027', 'article-title': 'Phys. Chem. Solids', 'volume': '32', 'year': '1971'} / Phys. Chem. Solids (1971)
{'key': '2024020309512701000_r3', 'first-page': '701', 'article-title': 'Solid State Commun.', 'volume': '11', 'year': '1972'} / Solid State Commun. (1972)
{'key': '2024020309512701000_r4', 'first-page': '625', 'article-title': 'Appl. Phys. Lett.', 'volume': '26', 'year': '1975'} / Appl. Phys. Lett. (1975)
{'key': '2024020309512701000_r5', 'first-page': '1818', 'article-title': 'J. Appl. Phys.', 'volume': '74', 'year': '1993'} / J. Appl. Phys. (1993)
{'key': '2024020309512701000_r6', 'first-page': '300', 'article-title': 'Phys. Lett.', 'volume': '4', 'year': '1963'} / Phys. Lett. (1963)
{'key': '2024020309512701000_r7', 'first-page': '293', 'article-title': 'Proc. Phys. Soc. London', 'volume': '78', 'year': '1961'} / Proc. Phys. Soc. London (1961)
{'key': '2024020309512701000_r8', 'first-page': '161', 'article-title': 'Phys. Status Solidi B', 'volume': '66', 'year': '1974'} / Phys. Status Solidi B (1974)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 4:51 a.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 8:21 p.m.)
Issued	29 years, 9 months ago (Nov. 6, 1995)
Published	29 years, 9 months ago (Nov. 6, 1995)
Published Print	29 years, 9 months ago (Nov. 6, 1995)

Funders 0

None

BibTeX

@article{Huang_1995, title={Direct observation of transferred-electron effect in GaN}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114797}, DOI={10.1063/1.114797}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, Z. C. and Goldberg, R. and Chen, J. C. and Zheng, Youdou and Mott, D. Brent and Shu, P.}, year={1995}, month=nov, pages={2825–2826} }

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