DOI: 10.1063/1.114793. High-efficiency energy up-conversion at GaAs-GaInP2 interfaces

High-efficiency energy up-conversion at GaAs-GaInP2 interfaces

10.1063/1.114793

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Luminescence far above the excitation energy is observed at GaAs- GaInP2 interfaces. The intensity of this up-converted signal varies superlinearly with excitation density. Up-converted photoluminescence excitation spectroscopy shows that the signal disappears if the excitation energy is tuned below the GaAs band gap. It is concluded that cold Auger processes and the presence of metastable states in the GaInP2, induced by residual CuPt ordering, cause this nonlinear effect at these type I interfaces.

Bibliography

Driessen, F. A. J. M. (1995). High-efficiency energy up-conversion at GaAs-GaInP2 interfaces. Applied Physics Letters, 67(19), 2813â2815.

Authors 1

F. A. J. M. Driessen (first)

References 22 Referenced 63

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 4:53 a.m.)
Indexed	1 year ago (Aug. 22, 2024, 12:44 a.m.)
Issued	29 years, 9 months ago (Nov. 6, 1995)
Published	29 years, 9 months ago (Nov. 6, 1995)
Published Print	29 years, 9 months ago (Nov. 6, 1995)

Funders 0

None

BibTeX

@article{Driessen_1995, title={High-efficiency energy up-conversion at GaAs-GaInP2 interfaces}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114793}, DOI={10.1063/1.114793}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Driessen, F. A. J. M.}, year={1995}, month=nov, pages={2813–2815} }

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