DOI: 10.1063/1.114776. Photovoltaic effects in GaN structures with <i>p</i>-<i>n</i> junctions

Photovoltaic effects in GaN structures with p-n junctions

10.1063/1.114776

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm.

Bibliography

Zhang, X., Kung, P., Walker, D., Piotrowski, J., Rogalski, A., Saxler, A., & Razeghi, M. (1995). Photovoltaic effects in GaN structures with p-n junctions. Applied Physics Letters, 67(14), 2028â2030.

Authors 7

X. Zhang (first)
P. Kung (additional)
D. Walker (additional)
J. Piotrowski (additional)
A. Rogalski (additional)
A. Saxler (additional)
M. Razeghi (additional)

References 12 Referenced 68

{'key': '2024020309422222700_r1', 'first-page': '1363', 'article-title': 'J. Appl. Phys.', 'volume': '76', 'year': '1994'} / J. Appl. Phys. (1994)
{'key': '2024020309422222700_r2', 'first-page': '2917', 'article-title': 'Appl. Phys. Lett.', 'volume': '60', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020309422222700_r3', 'first-page': '2455', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309422222700_r4'}
{'key': '2024020309422222700_r5'}
{'key': '2024020309422222700_r6', 'first-page': '339', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020309422222700_r7'}
{'key': '2024020309422222700_r8', 'first-page': '2958', 'article-title': 'Appl. Phys. Lett.', 'volume': '66', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020309422222700_r9'}
{'key': '2024020309422222700_r10', 'first-page': '53', 'article-title': 'Appl. Phys. Lett.', 'volume': '25', 'year': '1974'} / Appl. Phys. Lett. (1974)
{'key': '2024020309422222700_r11', 'first-page': '2859', 'article-title': 'Appl. Phys. Lett.', 'volume': '62', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309422222700_r12'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 4:42 a.m.)
Indexed	5 months, 1 week ago (March 24, 2025, 2:31 a.m.)
Issued	29 years, 11 months ago (Oct. 2, 1995)
Published	29 years, 11 months ago (Oct. 2, 1995)
Published Print	29 years, 11 months ago (Oct. 2, 1995)

Funders 0

None

BibTeX

@article{Zhang_1995, title={Photovoltaic effects in GaN structures with p-n junctions}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114776}, DOI={10.1063/1.114776}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, X. and Kung, P. and Walker, D. and Piotrowski, J. and Rogalski, A. and Saxler, A. and Razeghi, M.}, year={1995}, month=oct, pages={2028–2030} }

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