DOI: 10.1063/1.114766. Complete recrystallization of amorphous silicon carbide layers by ion irradiation

Complete recrystallization of amorphous silicon carbide layers by ion irradiation

10.1063/1.114766

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Ion-beam-induced recrystallization of amorphous surface layers on single-crystalline silicon carbide substrates (6H–SiC) has been investigated at temperatures of 500 and 1050 °C by cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry and channeling. It is shown, that ion irradiation substantially reduces the onset temperature of both the epitaxial layer regrowth and the random nucleation of crystalline grains. Two recrystallization regimes have been found. At 500 °C ion-beam-induced random nucleation (IBIRN) of crystalline grains strongly competes with ion-beam-induced epitaxial crystallization (IBIEC) and polycrystalline material stops the epitaxial regrowth front in an early stage. At a temperature of 1050 °C IBIEC dominates over IBIRN and a complete, but disturbed epitaxial regrowth is obtained.

Bibliography

Heera, V., KÃ¶gler, R., Skorupa, W., & Stoemenos, J. (1995). Complete recrystallization of amorphous silicon carbide layers by ion irradiation. Applied Physics Letters, 67(14), 1999â2001.

Authors 4

V. Heera (first)
R. Kögler (additional)
W. Skorupa (additional)
J. Stoemenos (additional)

References 19 Referenced 61

{'key': '2024020309404412800_r1'}
{'key': '2024020309404412800_r2', 'first-page': '1040', 'article-title': 'IEEE Trans. Electron Devices', 'volume': '41', 'year': '1994'} / IEEE Trans. Electron Devices (1994)
{'key': '2024020309404412800_r3', 'first-page': '677', 'article-title': 'Proc. IEEE', 'volume': '79', 'year': '1991'} / Proc. IEEE (1991)
{'key': '2024020309404412800_r4', 'first-page': '107', 'article-title': 'J. Mater. Res.', 'volume': '2', 'year': '1987'} / J. Mater. Res. (1987)
{'key': '2024020309404412800_r5', 'first-page': '1', 'article-title': 'Thin Solid Films', 'volume': '181', 'year': '1989'} / Thin Solid Films (1989)
{'key': '2024020309404412800_r6', 'first-page': '1206', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309404412800_r7'}
{'key': '2024020309404412800_r8', 'first-page': '229', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '316', 'year': '1994'} / Mater. Res. Soc. Symp. Proc. (1994)
{'key': '2024020309404412800_r9', 'first-page': '197', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '339', 'year': '1994'} / Mater. Res. Soc. Symp. Proc. (1994)
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{'key': '2024020309404412800_r11'}
{'key': '2024020309404412800_r12', 'first-page': '85', 'article-title': 'Thin Solid Films', 'volume': '199', 'year': '1991'} / Thin Solid Films (1991)
{'key': '2024020309404412800_r13', 'first-page': '1766', 'article-title': 'Appl. Phys. Lett.', 'volume': '57', 'year': '1990'} / Appl. Phys. Lett. (1990)
{'key': '2024020309404412800_r14', 'first-page': '973', 'article-title': 'Nucl. Instrum. Methods B', 'volume': '80/81', 'year': '1993'} / Nucl. Instrum. Methods B (1993)
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{'key': '2024020309404412800_r18', 'first-page': '507', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '242', 'year': '1992'} / Mater. Res. Soc. Symp. Proc. (1992)
{'key': '2024020309404412800_r19', 'first-page': '1675', 'article-title': 'J. Appl. Phys.', 'volume': '62', 'year': '1987'} / J. Appl. Phys. (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 4:40 a.m.)
Indexed	3 months, 1 week ago (May 21, 2025, 6:42 a.m.)
Issued	29 years, 10 months ago (Oct. 2, 1995)
Published	29 years, 10 months ago (Oct. 2, 1995)
Published Print	29 years, 10 months ago (Oct. 2, 1995)

Funders 0

None

BibTeX

@article{Heera_1995, title={Complete recrystallization of amorphous silicon carbide layers by ion irradiation}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114766}, DOI={10.1063/1.114766}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Heera, V. and Kögler, R. and Skorupa, W. and Stoemenos, J.}, year={1995}, month=oct, pages={1999–2001} }

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