DOI: 10.1063/1.114699. Characterization of arsenide/phosphide heterostructure interfaces grown by gas-source molecular beam epitaxy

Characterization of arsenide/phosphide heterostructure interfaces grown by gas-source molecular beam epitaxy

10.1063/1.114699

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have used cross-sectional scanning tunneling microscopy to study interface structure in arsenide/phosphide heterostructures grown by gas-source molecular beam epitaxy. High-resolution images of a sample grown at 550 °C by interrupting the growth of GaAs at 200 Å intervals with a 40 s P2 flux reveal phosphide interlayers of widths as large as 30 Å with lateral variations in structure over &lt;100 Å length scales. Images of a similar sample grown at 450 °C exhibit narrower interlayers and a lower level of phosphorus incorporation. These samples have also been characterized by high-resolution x-ray diffraction and reflection high-energy electron diffraction. Together, these studies provide direct information about nanometer-scale grading and lateral nonuniformity of interfaces that can occur under these growth conditions.

Bibliography

Lew, A. Y., Yan, C. H., Tu, C. W., & Yu, E. T. (1995). Characterization of arsenide/phosphide heterostructure interfaces grown by gas-source molecular beam epitaxy. Applied Physics Letters, 67(7), 932â934.

Authors 4

A. Y. Lew (first)
C. H. Yan (additional)
C. W. Tu (additional)
E. T. Yu (additional)

References 23 Referenced 14

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 4:24 a.m.)
Indexed	1 year, 2 months ago (July 1, 2024, 9:10 a.m.)
Issued	30 years ago (Aug. 14, 1995)
Published	30 years ago (Aug. 14, 1995)
Published Print	30 years ago (Aug. 14, 1995)

Funders 0

None

BibTeX

@article{Lew_1995, title={Characterization of arsenide/phosphide heterostructure interfaces grown by gas-source molecular beam epitaxy}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114699}, DOI={10.1063/1.114699}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lew, A. Y. and Yan, C. H. and Tu, C. W. and Yu, E. T.}, year={1995}, month=aug, pages={932–934} }

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