Abstract
We describe the results of a photoluminescence study of quantum dots which are formed by interface fluctuations in narrow GaAs/AlAs single quantum wells. The photoluminescence measurements were made with lateral spatial resolution ranging from the macroscopic down to the optical near-field regime. For spatial resolution below a few square microns the photoluminescence from individual quantum dots is resolved. Photoluminescence excitation spectroscopy is used to study the excited state spectrum of an exciton bound in a single quantum dot.
References
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Dates
| Type | When |
|---|---|
| Created | 23 years, 1 month ago (July 26, 2002, 9:40 a.m.) |
| Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:46 a.m.) |
| Indexed | 1 year, 2 months ago (June 24, 2024, 12:33 a.m.) |
| Issued | 29 years, 10 months ago (Oct. 16, 1995) |
| Published | 29 years, 10 months ago (Oct. 16, 1995) |
| Published Print | 29 years, 10 months ago (Oct. 16, 1995) |
@article{Gammon_1995, title={Excited state spectroscopy of excitons in single quantum dots}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114557}, DOI={10.1063/1.114557}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gammon, D. and Snow, E. S. and Katzer, D. S.}, year={1995}, month=oct, pages={2391–2393} }