DOI: 10.1063/1.1144713. A new third-level charge pumping method for accurate determination of interface-trap parameters in metal-oxide-semiconductor field-effect-transistors

A new third-level charge pumping method for accurate determination of interface-trap parameters in metal-oxide-semiconductor field-effect-transistors

10.1063/1.1144713

Crossref journal-article

AIP Publishing

Review of Scientific Instruments (317)

Abstract

We propose a new implementation of the third-level charge pumping technique for a precise determination of the energy distributions of electron and hole cross sections and interface state density in metal-oxide-semiconductor field-effect transistors (MOSFETs). Using an arbitrary function generator with a high clock rate and a sufficient storage memory length, it is possible to evaluate interface trap emission times and interface state densities in small geometry MOSFETs with a high-enegy resolution. The accuracy of the technique has been greatly increased owing to the high stability and the weak distortion of the signal applied to the gate of the device (numerically generating via a high-speed digital-to-analog converter) and the development of a new acquisition procedure. To illustrate the performance of this method, we present the first results concerning the characterization of 0.6 μm N-channel MOSFETs.

Bibliography

Autran, J.-L., & Balland, B. (1994). A new third-level charge pumping method for accurate determination of interface-trap parameters in metal-oxide-semiconductor field-effect-transistors. Review of Scientific Instruments, 65(6), 2141â2142.

Authors 2

Jean-Luc Autran (first)
Bernard Balland (additional)

References 6 Referenced 14

{'key': '2024020519373880500_r1', 'first-page': '42', 'volume': 'ED-31', 'year': '1984', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1984)
10.1063/1.339786 / J. Appl. Phys. (1987)
{'key': '2024020519373880500_r3', 'first-page': '339', 'volume': 'EDL-11', 'year': '1990', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1990)
10.1016/0038-1098(92)90200-S / Solid State Commun. (1992)
10.1063/1.107048 / Appl. Phys. Lett. (1992)
10.1002/j.1538-7305.1967.tb01727.x / Bell Syst. Technol. J. (1967)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:26 a.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 3:41 p.m.)
Indexed	1 year, 2 months ago (July 5, 2024, 7:15 p.m.)
Issued	31 years, 3 months ago (June 1, 1994)
Published	31 years, 3 months ago (June 1, 1994)
Published Print	31 years, 3 months ago (June 1, 1994)

Funders 0

None

BibTeX

@article{Autran_1994, title={A new third-level charge pumping method for accurate determination of interface-trap parameters in metal-oxide-semiconductor field-effect-transistors}, volume={65}, ISSN={1089-7623}, url={http://dx.doi.org/10.1063/1.1144713}, DOI={10.1063/1.1144713}, number={6}, journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Autran, Jean-Luc and Balland, Bernard}, year={1994}, month=jun, pages={2141–2142} }

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