Abstract
Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from two-dimensional (2D) strained-layer growth to three dimensional Stranski–Krastanov growth is observed. Additional PL lines that are redshifted with respect to the PL signal of the 2D strained layers are attributed to islands formed by three-dimensional growth. The occurrence of these new lines is accompanied by a blueshift of the PL of the 2D layers, indicating a strong Ge diffusion from the 2D layers towards the islands.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:07 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:29 a.m.) |
Indexed | 4 months, 4 weeks ago (April 2, 2025, 8:42 a.m.) |
Issued | 30 years ago (Aug. 28, 1995) |
Published | 30 years ago (Aug. 28, 1995) |
Published Print | 30 years ago (Aug. 28, 1995) |
@article{Schittenhelm_1995, title={Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114401}, DOI={10.1063/1.114401}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schittenhelm, P. and Gail, M. and Brunner, J. and Nützel, J. F. and Abstreiter, G.}, year={1995}, month=aug, pages={1292–1294} }