DOI: 10.1063/1.114327. Study of Schottky barriers on <i>n</i>-type GaN grown by low-pressure metalorganic chemical vapor deposition

Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition

10.1063/1.114327

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1×10−6 Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current–voltage (C–V) and current density–temperature (J–T) measurements, respectively. Also based on C–V and J–T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports.

Bibliography

Guo, J. D., Feng, M. S., Guo, R. J., Pan, F. M., & Chang, C. Y. (1995). Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition. Applied Physics Letters, 67(18), 2657â2659.

Authors 5

J. D. Guo (first)
M. S. Feng (additional)
R. J. Guo (additional)
F. M. Pan (additional)
C. Y. Chang (additional)

References 12 Referenced 131

{'key': '2024020309494521300_r1', 'first-page': '28', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020309494521300_r2', 'first-page': '1786', 'article-title': 'Appl. Phys. Lett.', 'volume': '62', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309494521300_r3', 'first-page': '1214', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309494521300_r4', 'first-page': '2917', 'article-title': 'Appl. Phys. Lett.', 'volume': '60', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020309494521300_r5', 'first-page': '1', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309494521300_r6', 'first-page': '1003', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020309494521300_r7', 'first-page': '2859', 'article-title': 'Appl. Phys. Lett.', 'volume': '62', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309494521300_r8', 'first-page': '2676', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1993'} / Appl. Phys. Lett. (1993)
{'key': '2024020309494521300_r9', 'first-page': '909', 'article-title': 'Electron. Lett.', 'volume': '30', 'year': '1994'} / Electron. Lett. (1994)
{'key': '2024020309494521300_r10', 'first-page': '320', 'article-title': 'IEEE Electron Device Lett.', 'volume': '4', 'year': '1983'} / IEEE Electron Device Lett. (1983)
{'key': '2024020309494521300_r11'}
{'key': '2024020309494521300_r12', 'first-page': 'L735', 'article-title': 'J. Phys. C', 'volume': '11', 'year': '1978'} / J. Phys. C (1978)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:40 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 4:49 a.m.)
Indexed	2 months ago (July 3, 2025, 12:03 p.m.)
Issued	29 years, 10 months ago (Oct. 30, 1995)
Published	29 years, 10 months ago (Oct. 30, 1995)
Published Print	29 years, 10 months ago (Oct. 30, 1995)

Funders 0

None

BibTeX

@article{Guo_1995, title={Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition}, volume={67}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.114327}, DOI={10.1063/1.114327}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Guo, J. D. and Feng, M. S. and Guo, R. J. and Pan, F. M. and Chang, C. Y.}, year={1995}, month=oct, pages={2657–2659} }

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