Abstract
In situ thin films of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3, (PMN-PT), with composition x=0.1, 0.3, 0.35, and 0.4, were deposited on MgO(100) substrates by pulsed laser deposition. The optimum conditions to form (100) oriented PMN-PT perovskite phase were at substrate temperatures in the range of 535 to 575 °C with an oxygen pressure of 200 mTorr. The Mg content in PMN-PT films was found to be essential to the formation of perovskite phase. Heterostructures of PMN-PT/La0.5Sr0.5CoO3 (LSCO) films were prepared on MgO(100) substrates to evaluate the dielectric properties of the films. The dielectric constant of PMN and PMN-PT films ranged from 1000 to 3800 at 10 kHz measured at room temperature. The highest dielectric constant was obtained from PMN films with 99% perovskite phase.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:58 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 3:43 a.m.) |
Indexed | 1 year, 4 months ago (April 6, 2024, 8:34 a.m.) |
Issued | 30 years, 5 months ago (March 27, 1995) |
Published | 30 years, 5 months ago (March 27, 1995) |
Published Print | 30 years, 5 months ago (March 27, 1995) |
@article{Tantigate_1995, title={Processing and properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films by pulsed laser deposition}, volume={66}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.113868}, DOI={10.1063/1.113868}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tantigate, C. and Lee, J. and Safari, A.}, year={1995}, month=mar, pages={1611–1613} }