Abstract
We have measured the drift mobility of electrons and holes in thin, vapor-deposited films of tris(8-hydroxyquinolinolato-N1,O8) aluminum using a time of flight photoconductivity technique. The drift of mobility of both carriers is dispersive and strongly electric field and temperature dependent. At ambient temperature and an electric field of 4×105 V cm−1, the effective mobility of electrons and holes is 1.4×10−6 and 2×10−8 cm2 V−1 s−1, respectively, in a 400 nm thick sample.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:39 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:11 a.m.) |
Indexed | 2 weeks, 4 days ago (Aug. 7, 2025, 5:03 p.m.) |
Issued | 30 years, 1 month ago (June 26, 1995) |
Published | 30 years, 1 month ago (June 26, 1995) |
Published Print | 30 years, 1 month ago (June 26, 1995) |
@article{Kepler_1995, title={Electron and hole mobility in tris(8-hydroxyquinolinolato-N1,O8) aluminum}, volume={66}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.113806}, DOI={10.1063/1.113806}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kepler, R. G. and Beeson, P. M. and Jacobs, S. J. and Anderson, R. A. and Sinclair, M. B. and Valencia, V. S. and Cahill, P. A.}, year={1995}, month=jun, pages={3618–3620} }