Abstract
A new method of measuring electrical resistance in a diamond-anvil cell has been developed. The sample assembly consisting of copper-plate electrodes and polymer film has been used for a modified two-probe method. The resistance measurements have been carried out at pressures up to 250 kbar and temperatures down to 1.7 K using a diamond-anvil cell driven by helium gas. This method has been applied to investigate the pressure-induced phase transition in iodine and superconducting transition in hydrogenated amorphous silicon films.
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Dates
Type | When |
---|---|
Created | 22 years, 5 months ago (March 10, 2003, 1:11 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 10, 2024, 2:09 p.m.) |
Indexed | 1 year ago (Aug. 6, 2024, 4:31 a.m.) |
Issued | 43 years, 4 months ago (April 1, 1982) |
Published | 43 years, 4 months ago (April 1, 1982) |
Published Print | 43 years, 4 months ago (April 1, 1982) |
@article{Sakai_1982, title={Electrical resistance measurements at high pressure and low temperature using a diamond-anvil cell}, volume={53}, ISSN={1089-7623}, url={http://dx.doi.org/10.1063/1.1136997}, DOI={10.1063/1.1136997}, number={4}, journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Sakai, Nobuko and Kajiwara, Takashi and Tsuji, Kazuhiko and Minomura, Shigeru}, year={1982}, month=apr, pages={499–502} }