Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A CdTe photoconductor array x-ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half-maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 μm FWHM using a 50 μm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors.

Bibliography

Yoo, S. S., Sivananthan, S., Faurie, J. P., Rodricks, B., Bai, J., & Montano, P. A. (1995). New CdTe photoconductor array detector for x-ray applications. Applied Physics Letters, 66(16), 2037–2039.

Authors 6
  1. S. S. Yoo (first)
  2. S. Sivananthan (additional)
  3. J. P. Faurie (additional)
  4. B. Rodricks (additional)
  5. J. Bai (additional)
  6. P. A. Montano (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:39 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 3:49 a.m.)
Indexed 4 weeks ago (July 27, 2025, 3:17 a.m.)
Issued 30 years, 4 months ago (April 17, 1995)
Published 30 years, 4 months ago (April 17, 1995)
Published Print 30 years, 4 months ago (April 17, 1995)
Funders 0

None

@article{Yoo_1995, title={New CdTe photoconductor array detector for x-ray applications}, volume={66}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.113684}, DOI={10.1063/1.113684}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yoo, S. S. and Sivananthan, S. and Faurie, J. P. and Rodricks, B. and Bai, J. and Montano, P. A.}, year={1995}, month=apr, pages={2037–2039} }