DOI: 10.1063/1.113636. Characterization of a point-contact on silicon using force microscopy-supported resistance measurements

Characterization of a point-contact on silicon using force microscopy-supported resistance measurements

10.1063/1.113636

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A conductive atomic force microscope (AFM) tip based on B-implanted diamond has been developed for the determination of the spatial distribution of charge carriers in semiconducting structures. The characteristics of this tip have been determined by studying the current–voltage behavior as a function of substrate resistivity and tip load. From this work a model of the electrical properties of the microcontact is emerging. It includes an Ohmic contribution to the overall resistance, which is related to the plastically deformed area, and contributions from a barrier. The tip imprints have been imaged with AFM and their physical dimensions are seen to match the requirements of the model. From resistance measurements on uniformly doped silicon a calibration curve has been established which can be used as a standard to convert measured resistance into resistivity.

Bibliography

De Wolf, P., Snauwaert, J., Clarysse, T., Vandervorst, W., & Hellemans, L. (1995). Characterization of a point-contact on silicon using force microscopy-supported resistance measurements. Applied Physics Letters, 66(12), 1530â1532.

Authors 5

P. De Wolf (first)
J. Snauwaert (additional)
T. Clarysse (additional)
W. Vandervorst (additional)
L. Hellemans (additional)

References 10 Referenced 106

{'key': '2024020308404676100_r1', 'first-page': '255', 'article-title': 'J. Electrochem. Soc.', 'volume': '113', 'year': '1966'} / J. Electrochem. Soc. (1966)
{'key': '2024020308404676100_r2', 'first-page': '342', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020308404676100_r3', 'first-page': '1854', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '29', 'year': '1990'} / Jpn. J. Appl. Phys. (1990)
{'key': '2024020308404676100_r4', 'first-page': '7034', 'article-title': 'J. Appl. Phys.', 'volume': '54', 'year': '1983'} / J. Appl. Phys. (1983)
{'key': '2024020308404676100_r5', 'first-page': '1653', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020308404676100_r6'}
{'key': '2024020308404676100_r7'}
{'key': '2024020308404676100_r8', 'first-page': '177', 'article-title': 'Phys. Status Solidi A', 'volume': '14', 'year': '1972'} / Phys. Status Solidi A (1972)
{'key': '2024020308404676100_r9', 'first-page': '2156', 'article-title': 'Phys. Rev. Lett.', 'volume': '60', 'year': '1988'} / Phys. Rev. Lett. (1988)
{'key': '2024020308404676100_r10', 'first-page': '961', 'article-title': 'J. Mater. Res.', 'volume': '7', 'year': '1992'} / J. Mater. Res. (1992)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:39 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:40 a.m.)
Indexed	1 year ago (Aug. 1, 2024, 4:24 a.m.)
Issued	30 years, 5 months ago (March 20, 1995)
Published	30 years, 5 months ago (March 20, 1995)
Published Print	30 years, 5 months ago (March 20, 1995)

Funders 0

None

BibTeX

@article{De_Wolf_1995, title={Characterization of a point-contact on silicon using force microscopy-supported resistance measurements}, volume={66}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.113636}, DOI={10.1063/1.113636}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={De Wolf, P. and Snauwaert, J. and Clarysse, T. and Vandervorst, W. and Hellemans, L.}, year={1995}, month=mar, pages={1530–1532} }

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