DOI: 10.1063/1.113244. Effects of chemical composition on the electrical properties of NO-nitrided SiO2

Effects of chemical composition on the electrical properties of NO-nitrided SiO2

10.1063/1.113244

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The impact of nitrogen (N) concentration and distribution on the electrical and reliability properties of rapid-thermally NO-annealed oxides is studied. The use of NO-annealing of thermally grown SiO2 provides an excellent way to isolate the effects of N, since this method allows for the incorporation of varying N profiles in the oxide without a simultaneous increase in dielectric thickness. Results show that the electrical properties of the dielectric under gate and substrate Fowler–Nordheim injection are highly sensitive to the N profile in the dielectric. While interface endurance (ΔDit) is seen to improve monotonically with increasing N concentrations for both +Vg and −Vg, the same is not observed for charge-to-breakdown (QBD) properties. It is found that although QBD improves with NO nitridation under +Vg, it shows a turnaround behavior under −Vg, i.e., for a 10-s NO-annealed oxide the QBD value is improved over control oxide while further nitridation is seen to degrade QBD under −Vg. The presence of bulk N and the nonuniform N distribution in the dielectric is responsible for this behavior.

Bibliography

Bhat, M., Han, L. K., Wristers, D., Yan, J., Kwong, D. L., & Fulford, J. (1995). Effects of chemical composition on the electrical properties of NO-nitrided SiO2. Applied Physics Letters, 66(10), 1225â1227.

Authors 6

M. Bhat (first)
L. K. Han (additional)
D. Wristers (additional)
J. Yan (additional)
D. L. Kwong (additional)
J. Fulford (additional)

References 19 Referenced 93

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{'key': '2024020308382827300_r4'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:39 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:38 a.m.)
Indexed	3 weeks, 3 days ago (Aug. 7, 2025, 4:41 p.m.)
Issued	30 years, 5 months ago (March 6, 1995)
Published	30 years, 5 months ago (March 6, 1995)
Published Print	30 years, 5 months ago (March 6, 1995)

Funders 0

None

BibTeX

@article{Bhat_1995, title={Effects of chemical composition on the electrical properties of NO-nitrided SiO2}, volume={66}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.113244}, DOI={10.1063/1.113244}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bhat, M. and Han, L. K. and Wristers, D. and Yan, J. and Kwong, D. L. and Fulford, J.}, year={1995}, month=mar, pages={1225–1227} }

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