DOI: 10.1063/1.113235. Photoemission capacitance transient spectroscopy of <i>n</i>-type GaN

Photoemission capacitance transient spectroscopy of n-type GaN

10.1063/1.113235

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electronic defects in n-type GaN were characterized by photoemission capacitance transient spectroscopy. Conventional deep level transient spectroscopy is of limited use in semiconductors with wide band gaps (e.g., 3.4 eV for GaN at 300 K) because it utilizes thermal energy for charge emission which restricts the accessible range of bandgap energies to within ∼0.9 eV of either band edge, for practical measurement conditions. For electron photoemission to the conduction band, four deep levels were detected at optical threshold energies of approximately 0.87, 0.97, 1.25, and 1.45 eV. It is suggested that the above photodetected deep levels may participate in the 2.2 eV defect luminescence transitions, which are also demonstrated for our material.

Bibliography

GÃ¶tz, W., Johnson, N. M., Street, R. A., Amano, H., & Akasaki, I. (1995). Photoemission capacitance transient spectroscopy of n-type GaN. Applied Physics Letters, 66(11), 1340â1342.

Authors 5

W. Götz (first)
N. M. Johnson (additional)
R. A. Street (additional)
H. Amano (additional)
I. Akasaki (additional)

References 17 Referenced 102

{'key': '2024020308390483900_r1', 'first-page': '428', 'article-title': 'Physica B', 'volume': '185', 'year': '1993'} / Physica B (1993)
{'key': '2024020308390483900_r2', 'first-page': '1687', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020308390483900_r3', 'first-page': '1363', 'article-title': 'J. Appl. Phys.', 'volume': '76', 'year': '1994'} / J. Appl. Phys. (1994)
{'key': '2024020308390483900_r4', 'first-page': '2395', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '19', 'year': '1980'} / Jpn. J. Appl. Phys. (1980)
{'key': '2024020308390483900_r5', 'first-page': '857', 'article-title': 'Appl. Phys. Lett.', 'volume': '64', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020308390483900_r6', 'first-page': '14758', 'article-title': 'Phys. Rev. B', 'volume': '49', 'year': '1994'} / Phys. Rev. B (1994)
{'key': '2024020308390483900_r7', 'first-page': '17878', 'article-title': 'Phys. Rev. B', 'volume': '48', 'year': '1993'} / Phys. Rev. B (1993)
{'key': '2024020308390483900_r8'}
{'key': '2024020308390483900_r9', 'first-page': '2673', 'article-title': 'Appl. Phys. Lett.', 'volume': '63', 'year': '1994'} / Appl. Phys. Lett. (1994)
{'key': '2024020308390483900_r10', 'first-page': '463', 'article-title': 'Appl. Phys. Lett.', 'volume': '65', 'year': '1994'} / Appl. Phys. Lett. (1994)
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{'key': '2024020308390483900_r12', 'first-page': '75', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '69', 'year': '1986'} / Mater. Res. Soc. Symp. Proc. (1986)
{'key': '2024020308390483900_r13', 'first-page': '5335', 'article-title': 'Phys. Rev. B', 'volume': '23', 'year': '1981'} / Phys. Rev. B (1981)
{'key': '2024020308390483900_r14'}
{'key': '2024020308390483900_r15'}
{'key': '2024020308390483900_r16'}
{'key': '2024020308390483900_r17', 'first-page': '11810', 'article-title': 'Phys. Rev. B', 'volume': '48', 'year': '1993'} / Phys. Rev. B (1993)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:39 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:39 a.m.)
Indexed	2 months ago (June 24, 2025, 7:28 a.m.)
Issued	30 years, 5 months ago (March 13, 1995)
Published	30 years, 5 months ago (March 13, 1995)
Published Print	30 years, 5 months ago (March 13, 1995)

Funders 0

None

BibTeX

@article{G_tz_1995, title={Photoemission capacitance transient spectroscopy of n-type GaN}, volume={66}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.113235}, DOI={10.1063/1.113235}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Götz, W. and Johnson, N. M. and Street, R. A. and Amano, H. and Akasaki, I.}, year={1995}, month=mar, pages={1340–1342} }

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