DOI: 10.1063/1.112991. Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties

Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties

10.1063/1.112991

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A novel fabrication method for ultrafine silicon wires is presented. To achieve electron physical confinement with a high potential SiO2 barrier, the SIMOX (separation by implanted oxygen) technique, electron beam lithography, anisotropic chemical etching, and thermal oxidation are used. The size of the wires is controlled by the lithography, the thickness of the top silicon layer and the thermal oxidation for narrowing the patterned silicon wire. The steplike structure in the conductance versus gate voltage curve, which remains up to higher temperatures for a smaller wire, suggests that a strong one-dimensional transport effect occurs in this silicon wire.

Bibliography

Nakajima, Y., Takahashi, Y., Horiguchi, S., Iwadate, K., Namatsu, H., Kurihara, K., & Tabe, M. (1994). Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties. Applied Physics Letters, 65(22), 2833â2835.

Authors 7

Y. Nakajima (first)
Y. Takahashi (additional)
S. Horiguchi (additional)
K. Iwadate (additional)
H. Namatsu (additional)
K. Kurihara (additional)
M. Tabe (additional)

References 11 Referenced 57

10.1103/PhysRevLett.60.848 / Phys. Rev. Lett. (1988)
10.1088/0022-3719/21/8/002 / J. Phys. C (1988)
10.1103/PhysRevB.45.13799 / Phys. Rev. B (1992)
10.1103/PhysRevB.46.12873 / Phys. Rev. B (1992)
{'key': '2024020308105362200_r5'}
10.1016/0168-583X(91)96291-R / Nucl. Instrum. Methods Phys. Res. B (1991)
{'key': '2024020308105362200_r7', 'first-page': '1019', 'volume': 'ED-40', 'year': '1993', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1993)
{'key': '2024020308105362200_r8', 'first-page': '1008', 'volume': 'ED-34', 'year': '1987', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1987)
{'key': '2024020308105362200_r9', 'first-page': '25', 'volume': 'ED-35', 'year': '1988', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1988)
10.1147/rd.13.0223 / IBM J. Res. Dev. (1957)
10.1103/PhysRevB.31.6207 / Phys. Rev. B (1985)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:39 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:11 a.m.)
Indexed	3 months ago (May 21, 2025, 4:47 p.m.)
Issued	30 years, 8 months ago (Nov. 28, 1994)
Published	30 years, 8 months ago (Nov. 28, 1994)
Published Print	30 years, 8 months ago (Nov. 28, 1994)

Funders 0

None

BibTeX

@article{Nakajima_1994, title={Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112991}, DOI={10.1063/1.112991}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nakajima, Y. and Takahashi, Y. and Horiguchi, S. and Iwadate, K. and Namatsu, H. and Kurihara, K. and Tabe, M.}, year={1994}, month=nov, pages={2833–2835} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        5,
        21
      ]
    ],
    "date-time": "2025-05-21T20:47:32Z",
    "timestamp": 1747860452387
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "22",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1994,
        11,
        28
      ]
    ]
  },
  "abstract": "<jats:p>A novel fabrication method for ultrafine silicon wires is presented. To achieve electron physical confinement with a high potential SiO2 barrier, the SIMOX (separation by implanted oxygen) technique, electron beam lithography, anisotropic chemical etching, and thermal oxidation are used. The size of the wires is controlled by the lithography, the thickness of the top silicon layer and the thermal oxidation for narrowing the patterned silicon wire. The steplike structure in the conductance versus gate voltage curve, which remains up to higher temperatures for a smaller wire, suggests that a strong one-dimensional transport effect occurs in this silicon wire.</jats:p>",
  "DOI": "10.1063/1.112991",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:39:01Z",
    "timestamp": 1027690741000
  },
  "page": "2833-2835",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 57,
  "title": "Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties",
  "prefix": "10.1063",
  "volume": "65",
  "author": [
    {
      "given": "Y.",
      "family": "Nakajima",
      "sequence": "first",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi 243-01, Japan"
        }
      ]
    },
    {
      "given": "Y.",
      "family": "Takahashi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi 243-01, Japan"
        }
      ]
    },
    {
      "given": "S.",
      "family": "Horiguchi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi 243-01, Japan"
        }
      ]
    },
    {
      "given": "K.",
      "family": "Iwadate",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi 243-01, Japan"
        }
      ]
    },
    {
      "given": "H.",
      "family": "Namatsu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi 243-01, Japan"
        }
      ]
    },
    {
      "given": "K.",
      "family": "Kurihara",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi 243-01, Japan"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Tabe",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi 243-01, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020308105362200_r1",
      "doi-asserted-by": "crossref",
      "first-page": "848",
      "DOI": "10.1103/PhysRevLett.60.848",
      "volume": "60",
      "year": "1988",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020308105362200_r2",
      "doi-asserted-by": "crossref",
      "first-page": "L209",
      "DOI": "10.1088/0022-3719/21/8/002",
      "volume": "21",
      "year": "1988",
      "journal-title": "J. Phys. C"
    },
    {
      "key": "2024020308105362200_r3",
      "doi-asserted-by": "crossref",
      "first-page": "13799",
      "DOI": "10.1103/PhysRevB.45.13799",
      "volume": "45",
      "year": "1992",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020308105362200_r4",
      "doi-asserted-by": "crossref",
      "first-page": "12873",
      "DOI": "10.1103/PhysRevB.46.12873",
      "volume": "46",
      "year": "1992",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020308105362200_r5"
    },
    {
      "key": "2024020308105362200_r6",
      "doi-asserted-by": "crossref",
      "first-page": "847",
      "DOI": "10.1016/0168-583X(91)96291-R",
      "volume": "55",
      "year": "1991",
      "journal-title": "Nucl. Instrum. Methods Phys. Res. B"
    },
    {
      "key": "2024020308105362200_r7",
      "first-page": "1019",
      "volume": "ED-40",
      "year": "1993",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020308105362200_r8",
      "first-page": "1008",
      "volume": "ED-34",
      "year": "1987",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020308105362200_r9",
      "first-page": "25",
      "volume": "ED-35",
      "year": "1988",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020308105362200_r10",
      "doi-asserted-by": "crossref",
      "first-page": "223",
      "DOI": "10.1147/rd.13.0223",
      "volume": "1",
      "year": "1957",
      "journal-title": "IBM J. Res. Dev."
    },
    {
      "key": "2024020308105362200_r11",
      "doi-asserted-by": "crossref",
      "first-page": "6207",
      "DOI": "10.1103/PhysRevB.31.6207",
      "volume": "31",
      "year": "1985",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/65/22/2833/18508172/2833_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/65/22/2833/18508172/2833_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T08:11:04Z",
    "timestamp": 1706947864000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/65/22/2833/63883/Fabrication-of-a-silicon-quantum-wire-surrounded"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1994,
        11,
        28
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "22",
    "published-print": {
      "date-parts": [
        [
          1994,
          11,
          28
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.112991",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1994,
        11,
        28
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1994,
        11,
        28
      ]
    ]
  }
}