DOI: 10.1063/1.112933. Thermal conduction in metallized silicon-dioxide layers on silicon

Thermal conduction in metallized silicon-dioxide layers on silicon

10.1063/1.112933

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The vertical thermal conductivities of thermally grown (TG) and chemical vapor deposited (CVD) silicon-dioxide layers 20 to 200 nm thick are measured using a simple, noncontact photothermal technique. The conductivities of TG and CVD layers are less by as much as 18% and 30%, respectively, than the conductivity of bulk fused silicon dioxide. No significant thickness dependence is observed. The thermal boundary resistance between the oxide layers and silicon is shown to be negligibly small. The boundary resistance of gold layers sputtered directly onto TG oxide is considerably larger than that of gold layers evaporated on TG oxide with a 20-nm chromium adhesion layer, and is comparable to internal resistances of the oxide layers.

Bibliography

KÃ¤ding, O. W., Skurk, H., & Goodson, K. E. (1994). Thermal conduction in metallized silicon-dioxide layers on silicon. Applied Physics Letters, 65(13), 1629â1631.

Authors 3

O. W. Käding (first)
H. Skurk (additional)
K. E. Goodson (additional)

References 6 Referenced 142

10.1049/el:19890557 / Electron. Lett. (1989)
{'key': '2024020307554167400_r2', 'first-page': '191', 'volume': '2', 'year': '1993', 'journal-title': 'Thermal Sci. Eng.'} / Thermal Sci. Eng. (1993)
10.1063/1.98939 / Appl. Phys. Lett. (1987)
{'key': '2024020307554167400_r4'}
10.1016/0040-6090(92)90123-S / Thin Solid Films (1992)
10.1109/55.244740 / IEEE Electron Devices Lett. (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:55 a.m.)
Indexed	3 months ago (May 27, 2025, 4:46 a.m.)
Issued	30 years, 11 months ago (Sept. 26, 1994)
Published	30 years, 11 months ago (Sept. 26, 1994)
Published Print	30 years, 11 months ago (Sept. 26, 1994)

Funders 0

None

BibTeX

@article{K_ding_1994, title={Thermal conduction in metallized silicon-dioxide layers on silicon}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112933}, DOI={10.1063/1.112933}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Käding, O. W. and Skurk, H. and Goodson, K. E.}, year={1994}, month=sep, pages={1629–1631} }

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