DOI: 10.1063/1.112908. Intense erbium-1.54-μm photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC

Intense erbium-1.54-μm photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC

10.1063/1.112908

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have observed intense line spectra in the neighborhood of 1.54 μm from erbium-implanted samples of 4H, 6H, 15R, and 3C SiC. Samples were implanted to a fluence of about 1013 erbium ions/cm2 using four implant energies. An anneal at 1700 °C in a SiC cavity was used. The temperature dependence of the integrated luminescence intensity from 1.49 to 1.64 μm varies very little from 2 to 400 K. No major differences are found for the spectra of the hexagonal and rhombohedral polytypes but there is a difference for cubic SiC (3C SiC).

Bibliography

Choyke, W. J., Devaty, R. P., Clemen, L. L., Yoganathan, M., Pensl, G., & HÃ¤ssler, Ch. (1994). Intense erbium-1.54-Î¼m photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC. Applied Physics Letters, 65(13), 1668â1670.

Authors 6

W. J. Choyke (first)
R. P. Devaty (additional)
L. L. Clemen (additional)
M. Yoganathan (additional)
G. Pensl (additional)
Ch. Hässler (additional)

References 12 Referenced 74

10.1063/1.94190 / Appl. Phys. Lett. (1983)
{'key': '2024020307560000100_r2'}
10.1063/1.336619 / J. Appl. Phys. (1986)
10.1063/1.97266 / Appl. Phys. Lett. (1986)
10.1063/1.98127 / Appl. Phys. Lett. (1987)
10.1063/1.338353 / J. Appl. Phys. (1987)
10.1063/1.349381 / J. Appl. Phys. (1991)
10.1063/1.349382 / J. Appl. Phys. (1991)
10.1063/1.106055 / Appl. Phys. Lett. (1991)
{'key': '2024020307560000100_r10'}
10.1557/PROC-301-87 / Mater. Res. Soc. Symp. Proc. (1993)
10.1557/PROC-301-181 / Mater. Res. Soc. Symp. Proc. (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:56 a.m.)
Indexed	4 months ago (April 25, 2025, 3:48 a.m.)
Issued	30 years, 11 months ago (Sept. 26, 1994)
Published	30 years, 11 months ago (Sept. 26, 1994)
Published Print	30 years, 11 months ago (Sept. 26, 1994)

Funders 0

None

BibTeX

@article{Choyke_1994, title={Intense erbium-1.54-μm photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112908}, DOI={10.1063/1.112908}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choyke, W. J. and Devaty, R. P. and Clemen, L. L. and Yoganathan, M. and Pensl, G. and Hässler, Ch.}, year={1994}, month=sep, pages={1668–1670} }

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