Abstract
In, Ga, and Se were coevaporated to form precursor films of (Inx,Ga1−x)2Se3. The precursors were then converted to CuInxGa1−xSe2 by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth. Photovoltaic devices made from these films showed good tolerance in device efficiency to variations in film composition. A device made from these films resulted in the highest total-area efficiency measured for any non-single-crystal, thin-film solar cell, at 15.9%.
References
11
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{'key': '2024020307343498500_r2'}
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:34 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 2:34 a.m.) |
Indexed | 2 days, 13 hours ago (Aug. 23, 2025, 9:44 p.m.) |
Issued | 31 years, 1 month ago (July 11, 1994) |
Published | 31 years, 1 month ago (July 11, 1994) |
Published Print | 31 years, 1 month ago (July 11, 1994) |
@article{Gabor_1994, title={High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor films}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112670}, DOI={10.1063/1.112670}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gabor, Andrew M. and Tuttle, John R. and Albin, David S. and Contreras, Miguel A. and Noufi, Rommel and Hermann, Allen M.}, year={1994}, month=jul, pages={198–200} }