Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

In, Ga, and Se were coevaporated to form precursor films of (Inx,Ga1−x)2Se3. The precursors were then converted to CuInxGa1−xSe2 by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth. Photovoltaic devices made from these films showed good tolerance in device efficiency to variations in film composition. A device made from these films resulted in the highest total-area efficiency measured for any non-single-crystal, thin-film solar cell, at 15.9%.

Bibliography

Gabor, A. M., Tuttle, J. R., Albin, D. S., Contreras, M. A., Noufi, R., & Hermann, A. M. (1994). High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor films. Applied Physics Letters, 65(2), 198–200.

Authors 6
  1. Andrew M. Gabor (first)
  2. John R. Tuttle (additional)
  3. David S. Albin (additional)
  4. Miguel A. Contreras (additional)
  5. Rommel Noufi (additional)
  6. Allen M. Hermann (additional)
References 11 Referenced 562
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:34 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 2:34 a.m.)
Indexed 2 days, 13 hours ago (Aug. 23, 2025, 9:44 p.m.)
Issued 31 years, 1 month ago (July 11, 1994)
Published 31 years, 1 month ago (July 11, 1994)
Published Print 31 years, 1 month ago (July 11, 1994)
Funders 0

None

@article{Gabor_1994, title={High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor films}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112670}, DOI={10.1063/1.112670}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gabor, Andrew M. and Tuttle, John R. and Albin, David S. and Contreras, Miguel A. and Noufi, Rommel and Hermann, Allen M.}, year={1994}, month=jul, pages={198–200} }