DOI: 10.1063/1.112634. Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering

Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering

10.1063/1.112634

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

ZnO thin film has been epitaxially grown on the (111) plane of the diamond substrate by rf magnetron sputtering at substrate temperature as low as 260 °C. The crystallinity was examined by x-ray diffraction and reflection high-energy electron diffraction. It was found that the smallest standard deviation angle estimated from the x-ray rocking curve of the ZnO(0002) peak was 0.27° whereas the mismatch of the lattice parameter between film and substrate is 28.8%. The epitaxial relationship between ZnO film and the diamond is determined as [112̄0] ZnO//[1̄01] diamond.

Bibliography

Hachigo, A., Nakahata, H., Higaki, K., Fujii, S., & Shikata, S. (1994). Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering. Applied Physics Letters, 65(20), 2556â2558.

Authors 5

Akihiro Hachigo (first)
Hideaki Nakahata (additional)
Kenjiro Higaki (additional)
Satoshi Fujii (additional)
Shin-ichi Shikata (additional)

References 19 Referenced 74

10.1109/PROC.1976.10190 / Proc. IEEE (1976)
10.1063/1.328100 / J. Appl. Phys. (1980)
10.1063/1.328019 / J. Appl. Phys. (1980)
{'issue': '20-3', 'key': '2024020308074876300_r4', 'first-page': '99', 'volume': '20', 'year': '1981', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1981)
{'key': '2024020308074876300_r5', 'volume': '74', 'year': '1981', 'journal-title': 'IEEE Ultrason. Symp. Proc.'} / IEEE Ultrason. Symp. Proc. (1981)
{'key': '2024020308074876300_r6', 'volume': '377', 'year': '1992', 'journal-title': 'IEEE Ultrason. Symp. Proc.'} / IEEE Ultrason. Symp. Proc. (1992)
10.1016/0925-9635(93)90169-3 / Diamond Relat. Mater. (1993)
10.1143/JJAP.33.324 / Jpn. J. Appl. Phys. (1994)
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10.1016/0040-6090(76)90220-0 / Thin Solid Films (1976)
10.1063/1.339458 / J. Appl. Phys. (1987)
10.1016/0022-0248(78)90461-X / J. Cryst. Growth (1978)
{'key': '2024020308074876300_r13'}
{'key': '2024020308074876300_r14'}
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10.1063/1.348748 / J. Appl. Phys. (1991)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:58 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:07 a.m.)
Indexed	11 months, 3 weeks ago (Aug. 30, 2024, 9:54 a.m.)
Issued	30 years, 9 months ago (Nov. 14, 1994)
Published	30 years, 9 months ago (Nov. 14, 1994)
Published Print	30 years, 9 months ago (Nov. 14, 1994)

Funders 0

None

BibTeX

@article{Hachigo_1994, title={Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112634}, DOI={10.1063/1.112634}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hachigo, Akihiro and Nakahata, Hideaki and Higaki, Kenjiro and Fujii, Satoshi and Shikata, Shin-ichi}, year={1994}, month=nov, pages={2556–2558} }

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