DOI: 10.1063/1.112338. <i>p</i>-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source

p-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source

10.1063/1.112338

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the growth of p-type CdSe having zinc blende structure with the hole concentration of 1×1017 cm−3 by molecular beam epitaxy using a nitrogen plasma source. The electrical and optical properties of CdSe:N epilayers are characterized by Hall and photoluminescence (PL) measurements. PL spectra from p-type CdSe:N epilayers at 14 K show dominant emission associated with a neutral donor-bound excitation at 1.745 eV and two kinds of donor-acceptor pair emission bands with zero phonon energies of 1.724 and 1.695 eV. An Au/p-CdSe:N electrode is examined as ohmic contact for p-ZnSe in terms of current-voltage characteristic. It is shown that the Au p-CdSe electrode works as an ohmic contact for p-ZnSe.

Bibliography

Ohtsuka, T., Kawamata, J., Zhu, Z., & Yao, T. (1994). p-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source. Applied Physics Letters, 65(4), 466â468.

Authors 4

Takeo Ohtsuka (first)
Junji Kawamata (additional)
Ziqiang Zhu (additional)
Takafumi Yao (additional)

References 12 Referenced 30

10.1063/1.109319 / Appl. Phys. Lett. (1993)
10.1049/el:19930513 / Electron. Lett. (1993)
10.1049/el:19930994 / Electron. Lett. (1993)
10.1049/el:19930586 / Electron. Lett. (1993)
10.1063/1.107945 / Appl. Phys. Lett. (1992)
10.1016/0022-0248(92)90800-X / J. Cryst. Growth (1992)
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10.1063/1.101033 / Appl. Phys. Lett. (1989)
10.1063/1.352005 / J. Appl. Phys. (1992)
10.1103/PhysRevB.4.2453 / Phys. Rev. B (1971)
{'key': '2024020307381851200_r11'}
{'key': '2024020307381851200_r12'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:39 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:38 a.m.)
Indexed	2 weeks, 5 days ago (Aug. 5, 2025, 8:26 a.m.)
Issued	31 years ago (July 25, 1994)
Published	31 years ago (July 25, 1994)
Published Print	31 years ago (July 25, 1994)

Funders 0

None

BibTeX

@article{Ohtsuka_1994, title={p-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112338}, DOI={10.1063/1.112338}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ohtsuka, Takeo and Kawamata, Junji and Zhu, Ziqiang and Yao, Takafumi}, year={1994}, month=jul, pages={466–468} }

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