DOI: 10.1063/1.112300. Influence of barrier height distribution on the parameters of Schottky diodes

Influence of barrier height distribution on the parameters of Schottky diodes

10.1063/1.112300

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

I-V curves of Schottky diodes are simulated for a Gaussian type of the Schottky barrier height (SBH) distribution using the model of noninteracting parallel diodes. The mean value and the standard deviation of the distribution are supposed to be constant, i.e., not dependent on the voltage and the temperature. The influence of the distribution parameters and the temperature on the apparent barrier height and the ideality factor is analyzed. It is shown that the ideality factor increases and the apparent barrier height decreases with increasing standard deviation and decreasing temperature. The simulation also provides a rough estimate for the standard deviation. Values of ∼0.09 V can result in ideality factors up to 1.2. The importance of the effect of series resistance in the approach of noninteracting diodes is emphasized.

Bibliography

DobroÄka, E., & Osvald, J. (1994). Influence of barrier height distribution on the parameters of Schottky diodes. Applied Physics Letters, 65(5), 575â577.

Authors 2

Edmund Dobročka (first)
Jozef Osvald (additional)

References 15 Referenced 170

10.1063/1.328160 / J. Appl. Phys. (1980)
10.1063/1.93171 / Appl. Phys. Lett. (1982)
10.1116/1.571765 / J. Vac. Sci. Technol. (1982)
10.1063/1.94418 / Appl. Phys. Lett. (1983)
10.1063/1.102584 / Appl. Phys. Lett. (1990)
10.1063/1.347243 / J. Appl. Phys. (1991)
10.1063/1.104747 / Appl. Phys. Lett. (1991)
10.1103/PhysRevLett.66.72 / Phys. Rev. Lett. (1991)
10.1063/1.349737 / J. Appl. Phys. (1991)
10.1103/PhysRevB.45.13509 / Phys. Rev. B (1992)
10.1016/0038-1101(86)90145-0 / Solid-State Electron. (1986)
10.1557/PROC-260-367 / Mater. Res. Soc. Symp. Proc. (1992)
10.1016/0038-1101(92)90189-J / Solid-State Electron. (1992)
{'key': '2024020307392911500_r14'}
10.1103/PhysRevLett.71.2224 / Phys. Rev. Lett. (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:39 a.m.)
Indexed	4 weeks, 2 days ago (Aug. 2, 2025, 12:43 a.m.)
Issued	31 years, 1 month ago (Aug. 1, 1994)
Published	31 years, 1 month ago (Aug. 1, 1994)
Published Print	31 years, 1 month ago (Aug. 1, 1994)

Funders 0

None

BibTeX

@article{Dobro_ka_1994, title={Influence of barrier height distribution on the parameters of Schottky diodes}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112300}, DOI={10.1063/1.112300}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dobročka, Edmund and Osvald, Jozef}, year={1994}, month=aug, pages={575–577} }

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