Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated reduction of the electron density in the InAs well was about 10%. The electron effective mass was found to be (0.048±0.004) m0 for an electron density of 18.0×1011 cm−2. The electron quantum lifetime decreased as the electron density was reduced by the negative persistent photoconductivity effect due to electron-hole interaction.

Bibliography

Lo, I., Mitchel, W. C., Kaspi, R., Elhamri, S., & Newrock, R. S. (1994). Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells. Applied Physics Letters, 65(8), 1024–1026.

Authors 5
  1. Ikai Lo (first)
  2. W. C. Mitchel (additional)
  3. R. Kaspi (additional)
  4. Said Elhamri (additional)
  5. R. S. Newrock (additional)
References 22 Referenced 18
  1. 10.1103/PhysRevLett.39.635 / Phys. Rev. Lett. (1977)
  2. 10.1103/PhysRevB.19.1015 / Phys. Rev. B (1979)
  3. 10.1103/PhysRevLett.44.810 / Phys. Rev. Lett. (1980)
  4. 10.1103/PhysRevLett.60.361 / Phys. Rev. Lett. (1988)
  5. 10.1103/PhysRevLett.61.873 / Phys. Rev. Lett. (1988)
  6. 10.1103/PhysRevB.39.10063 / Phys. Rev. B (1989)
  7. 10.1103/PhysRevB.43.11787 / Phys. Rev. B (1991)
  8. 10.1103/PhysRevLett.66.68 / Phys. Rev. Lett. (1991)
  9. 10.1103/PhysRevLett.66.774 / Phys. Rev. Lett. (1991)
  10. 10.1103/PhysRevLett.67.3010 / Phys. Rev. Lett. (1991)
  11. 10.1063/1.343167 / J. Appl. Phys. (1989)
  12. 10.1063/1.105188 / Appl. Phys. Lett. (1991)
  13. 10.1063/1.106558 / Appl. Phys. Lett. (1992)
  14. 10.1103/PhysRevB.48.9118 / Phys. Rev. B (1993)
  15. {'key': '2024020307462529600_r13', 'first-page': 'Rl', 'volume': '67', 'year': '1990', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1990)
  16. {'key': '2024020307462529600_r13a', 'first-page': 'Bl', 'volume': '6', 'year': '1991', 'journal-title': 'Semicond. Sci. Technol.'} / Semicond. Sci. Technol. (1991)
  17. 10.1103/PhysRevB.47.13478 / Phys. Rev. B (1993)
  18. 10.1063/1.353450 / J. Appl. Phys. (1993)
  19. {'key': '2024020307462529600_r16'}
  20. 10.1016/0039-6028(88)90700-5 / Surf. Sci. (1988)
  21. {'key': '2024020307462529600_r18'}
  22. 10.1016/0039-6028(86)90451-6 / Surf. Sci. (1986)
Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:38 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 2:46 a.m.)
Indexed 1 year, 6 months ago (Feb. 11, 2024, 12:26 a.m.)
Issued 31 years ago (Aug. 22, 1994)
Published 31 years ago (Aug. 22, 1994)
Published Print 31 years ago (Aug. 22, 1994)
Funders 0

None

@article{Lo_1994, title={Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112141}, DOI={10.1063/1.112141}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lo, Ikai and Mitchel, W. C. and Kaspi, R. and Elhamri, Said and Newrock, R. S.}, year={1994}, month=aug, pages={1024–1026} }