DOI: 10.1063/1.112116. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

10.1063/1.112116

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance. The device exhibited an excellent pinch-off and a low parasitic output conductance in the saturation regime. We measured the cutoff frequency fT and the maximum oscillation frequency fmax as 11 and 35 GHz, respectively. These values are superior to the highest reported values for field effect transistors based on other wide band-gap semiconductors such as SiC. These results demonstrate an excellent potential of AlGaN/GaN HFETs for microwave and millimeter wave applications.

Bibliography

Asif Khan, M., Kuznia, J. N., Olson, D. T., Schaff, W. J., Burm, J. W., & Shur, M. S. (1994). Microwave performance of a 0.25 Î¼m gate AlGaN/GaN heterostructure field effect transistor. Applied Physics Letters, 65(9), 1121â1123.

Authors 6

M. Asif Khan (first)
J. N. Kuznia (additional)
D. T. Olson (additional)
W. J. Schaff (additional)
J. W. Burm (additional)
M. S. Shur (additional)

References 7 Referenced 315

{'key': '2024020307491794400_r1', 'first-page': '383', 'volume': '32', 'year': '1971', 'journal-title': 'RCA Rev.'} / RCA Rev. (1971)
10.1063/1.88002 / Appl. Phys. Lett. (1975)
10.1063/1.354787 / J. Appl. Phys. (1993)
10.1063/1.109549 / Appl. Phys. Lett. (1993)
10.1063/1.109775 / Appl. Phys. Lett. (1993)
{'key': '2024020307491794400_r6'}
{'key': '2024020307491794400_r7'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:39 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:49 a.m.)
Indexed	3 weeks, 4 days ago (July 27, 2025, 3:19 a.m.)
Issued	30 years, 11 months ago (Aug. 29, 1994)
Published	30 years, 11 months ago (Aug. 29, 1994)
Published Print	30 years, 11 months ago (Aug. 29, 1994)

Funders 0

None

BibTeX

@article{Asif_Khan_1994, title={Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor}, volume={65}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.112116}, DOI={10.1063/1.112116}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Asif Khan, M. and Kuznia, J. N. and Olson, D. T. and Schaff, W. J. and Burm, J. W. and Shur, M. S.}, year={1994}, month=aug, pages={1121–1123} }

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