DOI: 10.1063/1.111312. Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

10.1063/1.111312

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This study demonstrates the presence of a negative electron affinity (NEA) surface on AlN was grown on α(6H)-SiC. Heteroepitaxial AlN was grown on α(6H)-SiC(0001) substrates by molecular beam epitaxy techniques. The surface electronic states were characterized by ultraviolet photoemission obtained at surface normal. The observation of a sharp spectral feature at the lowest energy of the emitted electrons is an indication of a surface with a negative electron affinity. In addition, the trend of the NEA feature was examined as a function of annealing. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.

Bibliography

Benjamin, M. C., Wang, C., Davis, R. F., & Nemanich, R. J. (1994). Observation of a negative electron affinity for heteroepitaxial AlN on Î±(6H)-SiC(0001). Applied Physics Letters, 64(24), 3288â3290.

Authors 4

M. C. Benjamin (first)
Cheng Wang (additional)
R. F. Davis (additional)
R. J. Nemanich (additional)

References 12 Referenced 201

10.1063/1.350990 / J. Appl. Phys. (1992)
10.1063/1.109816 / Appl. Phys. Lett. (1993)
10.1557/JMR.1993.2310 / J. Mater. Res. (1993)
10.1103/PhysRevB.20.624 / Phys. Rev. B (1979)
10.1016/0039-6028(86)90665-5 / Surf. Sci. (1986)
10.1116/1.571781 / J. Vac. Sci. Technol. (1982)
{'key': '2024020307261911400_r7', 'first-page': '1940', 'volume': '10', 'year': '1992', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1992)
10.1063/1.109639 / Appl. Phys. Lett. (1993)
10.1103/PhysRevB.49.13629 / Phys. Rev. B (1994)
10.1063/1.1141371 / Rev. Sci. Instrum. (1990)
{'key': '2024020307261911400_r11', 'first-page': '994', 'volume': '55', 'year': '1983', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1983)
{'key': '2024020307261911400_r12', 'first-page': '7070', 'volume': '43', 'year': '1991', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1991)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:38 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:26 a.m.)
Indexed	3 weeks, 5 days ago (Aug. 6, 2025, 8:03 a.m.)
Issued	31 years, 2 months ago (June 13, 1994)
Published	31 years, 2 months ago (June 13, 1994)
Published Print	31 years, 2 months ago (June 13, 1994)

Funders 0

None

BibTeX

@article{Benjamin_1994, title={Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)}, volume={64}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.111312}, DOI={10.1063/1.111312}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Benjamin, M. C. and Wang, Cheng and Davis, R. F. and Nemanich, R. J.}, year={1994}, month=jun, pages={3288–3290} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        6
      ]
    ],
    "date-time": "2025-08-06T12:03:16Z",
    "timestamp": 1754481796687
  },
  "reference-count": 12,
  "publisher": "AIP Publishing",
  "issue": "24",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1994,
        6,
        13
      ]
    ]
  },
  "abstract": "<jats:p>This study demonstrates the presence of a negative electron affinity (NEA) surface on AlN was grown on \u03b1(6H)-SiC. Heteroepitaxial AlN was grown on \u03b1(6H)-SiC(0001) substrates by molecular beam epitaxy techniques. The surface electronic states were characterized by ultraviolet photoemission obtained at surface normal. The observation of a sharp spectral feature at the lowest energy of the emitted electrons is an indication of a surface with a negative electron affinity. In addition, the trend of the NEA feature was examined as a function of annealing. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.</jats:p>",
  "DOI": "10.1063/1.111312",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:38:29Z",
    "timestamp": 1027690709000
  },
  "page": "3288-3290",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 201,
  "title": "Observation of a negative electron affinity for heteroepitaxial AlN on \u03b1(6H)-SiC(0001)",
  "prefix": "10.1063",
  "volume": "64",
  "author": [
    {
      "given": "M. C.",
      "family": "Benjamin",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Physics, and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202"
        }
      ]
    },
    {
      "given": "Cheng",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202"
        }
      ]
    },
    {
      "given": "R. F.",
      "family": "Davis",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202"
        }
      ]
    },
    {
      "given": "R. J.",
      "family": "Nemanich",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020307261911400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "3042",
      "DOI": "10.1063/1.350990",
      "volume": "71",
      "year": "1992",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020307261911400_r2",
      "doi-asserted-by": "crossref",
      "first-page": "990",
      "DOI": "10.1063/1.109816",
      "volume": "63",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020307261911400_r3",
      "doi-asserted-by": "crossref",
      "first-page": "2310",
      "DOI": "10.1557/JMR.1993.2310",
      "volume": "8",
      "year": "1993",
      "journal-title": "J. Mater. Res."
    },
    {
      "key": "2024020307261911400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "624",
      "DOI": "10.1103/PhysRevB.20.624",
      "volume": "20",
      "year": "1979",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020307261911400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "83",
      "DOI": "10.1016/0039-6028(86)90665-5",
      "volume": "165",
      "year": "1986",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2024020307261911400_r6",
      "doi-asserted-by": "crossref",
      "first-page": "364",
      "DOI": "10.1116/1.571781",
      "volume": "21",
      "year": "1982",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020307261911400_r7",
      "first-page": "1940",
      "volume": "10",
      "year": "1992",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020307261911400_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1878",
      "DOI": "10.1063/1.109639",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020307261911400_r9",
      "doi-asserted-by": "crossref",
      "first-page": "13629",
      "DOI": "10.1103/PhysRevB.49.13629",
      "volume": "49",
      "year": "1994",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020307261911400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "2407",
      "DOI": "10.1063/1.1141371",
      "volume": "61",
      "year": "1990",
      "journal-title": "Rev. Sci. Instrum."
    },
    {
      "key": "2024020307261911400_r11",
      "first-page": "994",
      "volume": "55",
      "year": "1983",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020307261911400_r12",
      "first-page": "7070",
      "volume": "43",
      "year": "1991",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/64/24/3288/18503503/3288_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/64/24/3288/18503503/3288_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T07:26:37Z",
    "timestamp": 1706945197000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/64/24/3288/63610/Observation-of-a-negative-electron-affinity-for"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1994,
        6,
        13
      ]
    ]
  },
  "references-count": 12,
  "journal-issue": {
    "issue": "24",
    "published-print": {
      "date-parts": [
        [
          1994,
          6,
          13
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.111312",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1994,
        6,
        13
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1994,
        6,
        13
      ]
    ]
  }
}